Frustrated antiferromagnetism at heterointerfaces in a semiconductor superlattice: MnSe/ZnSe

S. K. Chang, D. Lee, H. Nakata, A. V. Nurmikko, L. A. Kolodziejski, R. L. Gunshor

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Abstract

The role of interfaces in influencing behavior of antiferromagnetic semiconductors has been studied in the new strained layer MnSe/ZnSe superlattice system, grown by molecular-beam epitaxy, with individual MnSe layers approaching the monolayer limit. Large paramagneticlike contributions to overall magnetization are observed at low temperatures. Such anomalous characteristics are interpreted in terms of frustration against antiferromagnetic ordering by microstructure effects at the heterointerfaces.

Original languageEnglish
Pages (from-to)4835-4838
Number of pages4
JournalJournal of Applied Physics
Volume62
Issue number12
DOIs
Publication statusPublished - 1987

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Chang, S. K., Lee, D., Nakata, H., Nurmikko, A. V., Kolodziejski, L. A., & Gunshor, R. L. (1987). Frustrated antiferromagnetism at heterointerfaces in a semiconductor superlattice: MnSe/ZnSe. Journal of Applied Physics, 62(12), 4835-4838. https://doi.org/10.1063/1.338987