Fully flexible solution-deposited ZnO thin-film transistors

Keunkyu Song, Junghun Noh, Taehwan Jun, Yangho Jung, Hae Yoon Kang, Jooho Moon

Research output: Contribution to journalArticle

130 Citations (Scopus)

Abstract

Solution-processed, fully flexible ZnO thin-film transistors (TFTs) on semitransparent substrates are demonstrated. Our devices show exceptional and unprecedented stablity against various bending stresses, i.e., bending, rolling, wearing, and folding, exhibiting no degradation at tensile strains up to 6.35%.

Original languageEnglish
Pages (from-to)4308-4312
Number of pages5
JournalAdvanced Materials
Volume22
Issue number38
DOIs
Publication statusPublished - 2010 Oct 8

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Tensile strain
Thin film transistors
Degradation
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Song, Keunkyu ; Noh, Junghun ; Jun, Taehwan ; Jung, Yangho ; Kang, Hae Yoon ; Moon, Jooho. / Fully flexible solution-deposited ZnO thin-film transistors. In: Advanced Materials. 2010 ; Vol. 22, No. 38. pp. 4308-4312.
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Song, K, Noh, J, Jun, T, Jung, Y, Kang, HY & Moon, J 2010, 'Fully flexible solution-deposited ZnO thin-film transistors', Advanced Materials, vol. 22, no. 38, pp. 4308-4312. https://doi.org/10.1002/adma.201002163

Fully flexible solution-deposited ZnO thin-film transistors. / Song, Keunkyu; Noh, Junghun; Jun, Taehwan; Jung, Yangho; Kang, Hae Yoon; Moon, Jooho.

In: Advanced Materials, Vol. 22, No. 38, 08.10.2010, p. 4308-4312.

Research output: Contribution to journalArticle

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