Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

Taeyoon Lee, H. Seo, H. Hwang, B. Howe, S. Kodambaka, J. E. Greene, I. Petrov

Research output: Contribution to journalLetter

8 Citations (Scopus)

Abstract

Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N2 discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)TiN||(001) MgO and [100]TiN||[100]MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.

Original languageEnglish
Pages (from-to)5169-5172
Number of pages4
JournalThin Solid Films
Volume518
Issue number18
DOIs
Publication statusPublished - 2010 Jul 1

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Sputter deposition
Ion bombardment
ion irradiation
Dislocations (crystals)
Epitaxial growth
epitaxy
Fluxes
Adatoms
Epitaxial layers
Growth temperature
Film growth
Substrates
Temperature
adatoms
energy
x ray diffraction
Diffraction
Transmission electron microscopy
Heating
X rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, Taeyoon ; Seo, H. ; Hwang, H. ; Howe, B. ; Kodambaka, S. ; Greene, J. E. ; Petrov, I. / Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition. In: Thin Solid Films. 2010 ; Vol. 518, No. 18. pp. 5169-5172.
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Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition. / Lee, Taeyoon; Seo, H.; Hwang, H.; Howe, B.; Kodambaka, S.; Greene, J. E.; Petrov, I.

In: Thin Solid Films, Vol. 518, No. 18, 01.07.2010, p. 5169-5172.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

AU - Lee, Taeyoon

AU - Seo, H.

AU - Hwang, H.

AU - Howe, B.

AU - Kodambaka, S.

AU - Greene, J. E.

AU - Petrov, I.

PY - 2010/7/1

Y1 - 2010/7/1

N2 - Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N2 discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)TiN||(001) MgO and [100]TiN||[100]MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.

AB - Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N2 discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)TiN||(001) MgO and [100]TiN||[100]MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.

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