Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

Taeyoon Lee, H. Seo, H. Hwang, B. Howe, S. Kodambaka, J. E. Greene, I. Petrov

Research output: Contribution to journalLetter

11 Citations (Scopus)

Abstract

Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N2 discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)TiN||(001) MgO and [100]TiN||[100]MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.

Original languageEnglish
Pages (from-to)5169-5172
Number of pages4
JournalThin Solid Films
Volume518
Issue number18
DOIs
Publication statusPublished - 2010 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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