Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Jungwoo Oh, Prashant Majhi, Raj Jammy, Raymond Joe, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu

Research output: Contribution to journalArticle

Abstract

The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 Å with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.

Original languageEnglish
Pages (from-to)1804-1806
Number of pages3
JournalMicroelectronic Engineering
Volume85
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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