Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Jungwoo Oh, Prashant Majhi, Raj Jammy, Raymond Joe, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu

Research output: Contribution to journalArticle

Abstract

The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 Å with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.

Original languageEnglish
Pages (from-to)1804-1806
Number of pages3
JournalMicroelectronic Engineering
Volume85
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1

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MOS devices
Epitaxial films
Gate dielectrics
semiconductor devices
metal oxide semiconductors
Oxides
Metals
Substrates
Field effect transistors
Leakage currents
oxides
Capacitors
Permittivity
Current density
capacitors
leakage
field effect transistors
permittivity
current density
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Oh, Jungwoo ; Majhi, Prashant ; Jammy, Raj ; Joe, Raymond ; Sugawara, Takuya ; Akasaka, Yasushi ; Kaitsuka, Takanobu ; Arikado, Tsunetoshi ; Tomoyasu, Masayuki. / Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices. In: Microelectronic Engineering. 2008 ; Vol. 85, No. 8. pp. 1804-1806.
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abstract = "The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 {\AA} with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.",
author = "Jungwoo Oh and Prashant Majhi and Raj Jammy and Raymond Joe and Takuya Sugawara and Yasushi Akasaka and Takanobu Kaitsuka and Tsunetoshi Arikado and Masayuki Tomoyasu",
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Oh, J, Majhi, P, Jammy, R, Joe, R, Sugawara, T, Akasaka, Y, Kaitsuka, T, Arikado, T & Tomoyasu, M 2008, 'Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices', Microelectronic Engineering, vol. 85, no. 8, pp. 1804-1806. https://doi.org/10.1016/j.mee.2008.05.013

Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices. / Oh, Jungwoo; Majhi, Prashant; Jammy, Raj; Joe, Raymond; Sugawara, Takuya; Akasaka, Yasushi; Kaitsuka, Takanobu; Arikado, Tsunetoshi; Tomoyasu, Masayuki.

In: Microelectronic Engineering, Vol. 85, No. 8, 01.08.2008, p. 1804-1806.

Research output: Contribution to journalArticle

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T1 - Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Joe, Raymond

AU - Sugawara, Takuya

AU - Akasaka, Yasushi

AU - Kaitsuka, Takanobu

AU - Arikado, Tsunetoshi

AU - Tomoyasu, Masayuki

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AB - The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 Å with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.

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