The authors report on fully strained Si0.75Ge0.25 metal-oxide-semiconductor capacitors with HfSiO2 high-k gate dielectric and TaN metal gate fabricated on Si substrates. Fully strained Si0.75Ge0.25 films are directly grown on Si substrates below the critical thickness. HfSiO2 high-k gate dielectrics exhibit an equivalent oxide thickness of 13-18 Å with a permittivity of 17.7 and gate leakage current density lower than SiO2 gate oxides by >100×. Interfacial oxide of the HfSiO2/Si0.75Ge0.25 stack consists primarily of SiO2 with a small amount of Ge and Hf. High performance SiGe field effect transistors are highly manufacturable with excellent electrical characteristics afforded by the fully strained HfSiO2/SiGe gate stack.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering