Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain

Yongjae Cho, Ji Hoon Park, Minju Kim, Yeonsu Jeong, Jongtae Ahn, Taeyoung Kim, Hyunyong Choi, Yeonjin Yi, Seongil Im

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.

Original languageEnglish
Article number1801204
JournalAdvanced Functional Materials
Volume28
Issue number39
DOIs
Publication statusPublished - 2018 Sep 26

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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