Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain

Yongjae Cho, Ji Hoon Park, Minju Kim, Yeonsu Jeong, Jongtae Ahn, Taeyoung Kim, Hyunyong Choi, Yeonjin Yi, Seongil Im

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.

Original languageEnglish
Article number1801204
JournalAdvanced Functional Materials
Volume28
Issue number39
DOIs
Publication statusPublished - 2018 Sep 26

Fingerprint

Field effect transistors
Tin oxides
indium oxides
Indium
tin oxides
Transistors
transistors
field effect transistors
Plasmas
Photovoltaic effects
photovoltaic effect
indium tin oxide
oxygen plasma
optoelectronic devices
Optoelectronic devices
Modulators
Oxide films
Transition metals
modulators
transmittance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Cho, Yongjae ; Park, Ji Hoon ; Kim, Minju ; Jeong, Yeonsu ; Ahn, Jongtae ; Kim, Taeyoung ; Choi, Hyunyong ; Yi, Yeonjin ; Im, Seongil. / Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain. In: Advanced Functional Materials. 2018 ; Vol. 28, No. 39.
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abstract = "Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70{\%} transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.",
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Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain. / Cho, Yongjae; Park, Ji Hoon; Kim, Minju; Jeong, Yeonsu; Ahn, Jongtae; Kim, Taeyoung; Choi, Hyunyong; Yi, Yeonjin; Im, Seongil.

In: Advanced Functional Materials, Vol. 28, No. 39, 1801204, 26.09.2018.

Research output: Contribution to journalArticle

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T1 - Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain

AU - Cho, Yongjae

AU - Park, Ji Hoon

AU - Kim, Minju

AU - Jeong, Yeonsu

AU - Ahn, Jongtae

AU - Kim, Taeyoung

AU - Choi, Hyunyong

AU - Yi, Yeonjin

AU - Im, Seongil

PY - 2018/9/26

Y1 - 2018/9/26

N2 - Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.

AB - Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.

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