Abstract
Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.
| Original language | English |
|---|---|
| Article number | 1801204 |
| Journal | Advanced Functional Materials |
| Volume | 28 |
| Issue number | 39 |
| DOIs | |
| Publication status | Published - 2018 Sep 26 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Electrochemistry
Cite this
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Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain. / Cho, Yongjae; Park, Ji Hoon; Kim, Minju; Jeong, Yeonsu; Ahn, Jongtae; Kim, Taeyoung; Choi, Hyunyong; Yi, Yeonjin; Im, Seongil.
In: Advanced Functional Materials, Vol. 28, No. 39, 1801204, 26.09.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain
AU - Cho, Yongjae
AU - Park, Ji Hoon
AU - Kim, Minju
AU - Jeong, Yeonsu
AU - Ahn, Jongtae
AU - Kim, Taeyoung
AU - Choi, Hyunyong
AU - Yi, Yeonjin
AU - Im, Seongil
PY - 2018/9/26
Y1 - 2018/9/26
N2 - Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.
AB - Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm2 V−1 s−1, a high ON/OFF current ratio of ≈105, and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm2 V−1 s−1), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.
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U2 - 10.1002/adfm.201801204
DO - 10.1002/adfm.201801204
M3 - Article
AN - SCOPUS:85051189116
VL - 28
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 39
M1 - 1801204
ER -