Negative differential resistance/transconductance (NDR/NDT) has been attracting significant attention as a key functionality in the development of multivalued logic (MVL) systems that can overcome the limits of conventional binary logic devices. A high peak-to-valley current ratio (PVCR) and more than double-peak transfer characteristics are required to achieve a stable MVL operation. In this study, an organic NDR (ONDR) device with double-peak transfer characteristics and a high peak-to-valley current ratio (PVCR; >102) is fabricated by utilizing an organic material platform for the development of a key element device for MVL applications. The organic NDT (ONDT) device is fabricated using a series connection of electron-dominant (P(NDI2OD-Se2)) and hole-dominant (P(DPP2DT-T2)) channel ambipolar organic field-effect transistors (AOFETs), and the NDR feature is achieved via correlated biasing of the ONDT device. The PVCR of the ONDT device can reach up to 13,000 via carrier transfer modulation of the AOFETs by varying the PMMA:P(VDF-TrFE) ratio of the mixed layer that is used as the top-gate dielectric of each AOFET. Further, ternary latch circuit operation is demonstrated using the developed ONDR device that stores three logic states with three distinct and controllable output states by adjusting the PMMA:P(VDF-TrFE) ratio of the dielectric layer.
Bibliographical noteFunding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Korean government (MSIP) (grant numbers: 2017R1A4A1015400, 2018R1D1A1A09081931, and 2019M3F3A1A01074451).
Copyright © 2020 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)