Ga vacancies in low-temperature-grown GaAs identified by slow positrons

J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn, E. R. Weber

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A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (VGa) by comparing the annihilation parameters to those of Ga vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(VGa)=1.024(1). The VGa concentration increases up to 1018 cm-3 by decreasing the growth temperature to 200 °C. The vacancy concentration can account for the compensation of AsGa+ antisites as was previously assumed.

Original languageEnglish
Pages (from-to)638-640
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1997 Aug 4


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Gebauer, J., Krause-Rehberg, R., Eichler, S., Luysberg, M., Sohn, H., & Weber, E. R. (1997). Ga vacancies in low-temperature-grown GaAs identified by slow positrons. Applied Physics Letters, 71(5), 638-640.