Ga vacancies in low-temperature-grown GaAs identified by slow positrons

J. Gebauer; R. Krause-Rehberg; S. Eichler; M. Luysberg; H. Sohn; E. R. Weber

doi:10.1063/1.119814

Ga vacancies in low-temperature-grown GaAs identified by slow positrons

J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn, E. R. Weber

Department of Materials Science and Engineering

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58 Citations (Scopus)

Abstract

A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (V_Ga) by comparing the annihilation parameters to those of Ga vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(V_Ga)=1.024(1). The V_Ga concentration increases up to 10¹⁸ cm^-3 by decreasing the growth temperature to 200 °C. The vacancy concentration can account for the compensation of As_Ga⁺ antisites as was previously assumed.

Original language	English
Pages (from-to)	638-640
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	5
DOIs	https://doi.org/10.1063/1.119814
Publication status	Published - 1997 Aug 4

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.119814

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abstract = "A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (VGa) by comparing the annihilation parameters to those of Ga vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(VGa)=1.024(1). The VGa concentration increases up to 1018 cm-3 by decreasing the growth temperature to 200 °C. The vacancy concentration can account for the compensation of AsGa+ antisites as was previously assumed.",

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AU - Gebauer, J.

AU - Krause-Rehberg, R.

AU - Eichler, S.

AU - Luysberg, M.

AU - Sohn, H.

AU - Weber, E. R.

PY - 1997/8/4

Y1 - 1997/8/4

N2 - A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (VGa) by comparing the annihilation parameters to those of Ga vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(VGa)=1.024(1). The VGa concentration increases up to 1018 cm-3 by decreasing the growth temperature to 200 °C. The vacancy concentration can account for the compensation of AsGa+ antisites as was previously assumed.

AB - A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (VGa) by comparing the annihilation parameters to those of Ga vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(VGa)=1.024(1). The VGa concentration increases up to 1018 cm-3 by decreasing the growth temperature to 200 °C. The vacancy concentration can account for the compensation of AsGa+ antisites as was previously assumed.

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Ga vacancies in low-temperature-grown GaAs identified by slow positrons

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