Ga vacancies in low-temperature-grown GaAs identified by slow positrons

J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn, E. R. Weber

Research output: Contribution to journalArticle

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Abstract

A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (VGa) by comparing the annihilation parameters to those of Ga vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(VGa)=1.024(1). The VGa concentration increases up to 1018 cm-3 by decreasing the growth temperature to 200 °C. The vacancy concentration can account for the compensation of AsGa + antisites as was previously assumed.

Original languageEnglish
Pages (from-to)638-640
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number5
DOIs
Publication statusPublished - 1997 Aug 4

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positrons
positron annihilation
defects
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Gebauer, J., Krause-Rehberg, R., Eichler, S., Luysberg, M., Sohn, H., & Weber, E. R. (1997). Ga vacancies in low-temperature-grown GaAs identified by slow positrons. Applied Physics Letters, 71(5), 638-640. https://doi.org/10.1063/1.119814
Gebauer, J. ; Krause-Rehberg, R. ; Eichler, S. ; Luysberg, M. ; Sohn, H. ; Weber, E. R. / Ga vacancies in low-temperature-grown GaAs identified by slow positrons. In: Applied Physics Letters. 1997 ; Vol. 71, No. 5. pp. 638-640.
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Gebauer, J, Krause-Rehberg, R, Eichler, S, Luysberg, M, Sohn, H & Weber, ER 1997, 'Ga vacancies in low-temperature-grown GaAs identified by slow positrons', Applied Physics Letters, vol. 71, no. 5, pp. 638-640. https://doi.org/10.1063/1.119814

Ga vacancies in low-temperature-grown GaAs identified by slow positrons. / Gebauer, J.; Krause-Rehberg, R.; Eichler, S.; Luysberg, M.; Sohn, H.; Weber, E. R.

In: Applied Physics Letters, Vol. 71, No. 5, 04.08.1997, p. 638-640.

Research output: Contribution to journalArticle

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AU - Weber, E. R.

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Gebauer J, Krause-Rehberg R, Eichler S, Luysberg M, Sohn H, Weber ER. Ga vacancies in low-temperature-grown GaAs identified by slow positrons. Applied Physics Letters. 1997 Aug 4;71(5):638-640. https://doi.org/10.1063/1.119814