Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots

K. Kim, T. B. Norris, P. Bhattacharya

Research output: Contribution to journalConference article

Abstract

Femtosecond three-pulse white light pump and probe differential transmission (DT) spectroscopy were used to analyze gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots (QD). Molecular beam epitaxy was used to grow the samples on a (001) semi-insulating GaAs substrate. Analysis suggested that QD excited state carriers were reservoirs for optically active ground state carriers with sub-picosecond gain recovery.

Original languageEnglish
Pages (from-to)401-402
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 2001 Dec 1
Event14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States
Duration: 2001 Nov 112001 Nov 15

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Semiconductor quantum dots
Excited states
Molecular beam epitaxy
Ground state
Laser pulses
Pumps
Spectroscopy
Recovery
Substrates
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots. / Kim, K.; Norris, T. B.; Bhattacharya, P.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 01.12.2001, p. 401-402.

Research output: Contribution to journalConference article

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T1 - Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots

AU - Kim, K.

AU - Norris, T. B.

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