Abstract
Experiments were performed to probe the dynamics of the entire gain spectrum in two InGaAs(InAs) samples. Spectral hole-burning in ground and excited states was directly shown. Relaxation due to intradot scattering and carrier-capture from continuum was revealed.
Original language | English |
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Pages | 159-160 |
Number of pages | 2 |
Publication status | Published - 2002 |
Event | Quantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States Duration: 2002 May 19 → 2002 May 24 |
Other
Other | Quantum Electronics and Laser Science (QELS) 2002 |
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Country/Territory | United States |
City | Long Beach, CA |
Period | 02/5/19 → 02/5/24 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)