Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots

K. Kim, J. Urayama, T. B. Norris, J. Singh, J. Phillips, P. Bhattacharya

Research output: Contribution to conferencePaper

Abstract

Experiments were performed to probe the dynamics of the entire gain spectrum in two InGaAs(InAs) samples. Spectral hole-burning in ground and excited states was directly shown. Relaxation due to intradot scattering and carrier-capture from continuum was revealed.

Original languageEnglish
Pages159-160
Number of pages2
Publication statusPublished - 2002 Jan 1
EventQuantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States
Duration: 2002 May 192002 May 24

Other

OtherQuantum Electronics and Laser Science (QELS) 2002
CountryUnited States
CityLong Beach, CA
Period02/5/1902/5/24

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, K., Urayama, J., Norris, T. B., Singh, J., Phillips, J., & Bhattacharya, P. (2002). Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots. 159-160. Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States.