Abstract
Experiments were performed to probe the dynamics of the entire gain spectrum in two InGaAs(InAs) samples. Spectral hole-burning in ground and excited states was directly shown. Relaxation due to intradot scattering and carrier-capture from continuum was revealed.
| Original language | English |
|---|---|
| Pages | 159-160 |
| Number of pages | 2 |
| Publication status | Published - 2002 Jan 1 |
| Event | Quantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States Duration: 2002 May 19 → 2002 May 24 |
Other
| Other | Quantum Electronics and Laser Science (QELS) 2002 |
|---|---|
| Country | United States |
| City | Long Beach, CA |
| Period | 02/5/19 → 02/5/24 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Kim, K., Urayama, J., Norris, T. B., Singh, J., Phillips, J., & Bhattacharya, P. (2002). Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots. 159-160. Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States.