Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach

Sang Kwon Lee, Heon Jin Choi, Peter Pauzauskie, Peidong Yang, Nam Kyu Cho, Hyo Derk Park, Eun Kyung Suh, Kee Young Lim, Hyung Jae Lee

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Abstract

We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 ∼ 200 nm and lengths of 5 ∼ 20 μm. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-beam lithography. In our electrical measurement, the carrier concentration and mobility were ≈2 ∼ 4 × 1018 cm-3 and 60 ∼ 70 cm2/V s, respectively.

Original languageEnglish
Pages (from-to)2775-2778
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number12
DOIs
Publication statusPublished - 2004 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Lee, S. K., Choi, H. J., Pauzauskie, P., Yang, P., Cho, N. K., Park, H. D., Suh, E. K., Lim, K. Y., & Lee, H. J. (2004). Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach. Physica Status Solidi (B) Basic Research, 241(12), 2775-2778. https://doi.org/10.1002/pssb.200404989