Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach

Sang Kwon Lee; Heon Jin Choi; Peter Pauzauskie; Peidong Yang; Nam Kyu Cho; Hyo Derk Park; Eun Kyung Suh; Kee Young Lim; Hyung Jae Lee

doi:10.1002/pssb.200404989

Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach

Sang Kwon Lee, Heon Jin Choi, Peter Pauzauskie, Peidong Yang, Nam Kyu Cho, Hyo Derk Park, Eun Kyung Suh, Kee Young Lim, Hyung Jae Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 ∼ 200 nm and lengths of 5 ∼ 20 μm. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-beam lithography. In our electrical measurement, the carrier concentration and mobility were ≈2 ∼ 4 × 10¹⁸ cm^-3 and 60 ∼ 70 cm²/V s, respectively.

Original language	English
Pages (from-to)	2775-2778
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200404989
Publication status	Published - 2004 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach",

abstract = "We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 ∼ 200 nm and lengths of 5 ∼ 20 μm. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-beam lithography. In our electrical measurement, the carrier concentration and mobility were ≈2 ∼ 4 × 1018 cm-3 and 60 ∼ 70 cm2/V s, respectively.",

author = "Lee, {Sang Kwon} and Choi, {Heon Jin} and Peter Pauzauskie and Peidong Yang and Cho, {Nam Kyu} and Park, {Hyo Derk} and Suh, {Eun Kyung} and Lim, {Kee Young} and Lee, {Hyung Jae}",

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volume = "241",

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Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach. / Lee, Sang Kwon; Choi, Heon Jin; Pauzauskie, Peter; Yang, Peidong; Cho, Nam Kyu; Park, Hyo Derk; Suh, Eun Kyung; Lim, Kee Young; Lee, Hyung Jae.

In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 12, 10.2004, p. 2775-2778.

Research output: Contribution to journal › Article › peer-review

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T1 - Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach

AU - Lee, Sang Kwon

AU - Choi, Heon Jin

AU - Pauzauskie, Peter

AU - Yang, Peidong

AU - Cho, Nam Kyu

AU - Park, Hyo Derk

AU - Suh, Eun Kyung

AU - Lim, Kee Young

AU - Lee, Hyung Jae

PY - 2004/10

Y1 - 2004/10

N2 - We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 ∼ 200 nm and lengths of 5 ∼ 20 μm. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-beam lithography. In our electrical measurement, the carrier concentration and mobility were ≈2 ∼ 4 × 1018 cm-3 and 60 ∼ 70 cm2/V s, respectively.

AB - We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 ∼ 200 nm and lengths of 5 ∼ 20 μm. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-beam lithography. In our electrical measurement, the carrier concentration and mobility were ≈2 ∼ 4 × 1018 cm-3 and 60 ∼ 70 cm2/V s, respectively.

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Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach

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