GaN HEMT based high efficiency push-pull inverse class-F power amplifier using chip-on-board technique

Jun Chul Park, Chan Sei Yoo, Wonshil Kang, Dongsu Kim, Jong Gwan Yook, Woo Sung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This paper presents a high efficiency push-pull inverse class-F (class-F -1) power amplifier (PA) using a gallium nitride (GaN) transistor for class-S system - a digitally controlled by delta-sigma modulation. To enhance a drain efficiency of class-F -1 PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. A harmonic control circuit considering output intrinsic parameters of the transistor from switch-based model controls harmonics to extract pure fundamental frequency of the output signal. For a high efficiency push-pull operation, low loss rat-race baluns are integrated at input and output circuits. From the measured results for a continuous wave of 3.3 GHz, the class-F -1 PA shows a maximum output power of 35.5 dBm and a power gain of about 10 dB. Also, the proposed PA provides a high power-added-efficiency (PAE) of 64.2% and a drain efficiency of 77.2% at maximum output power. The drain efficiency is still remained over 75% in the frequency range of 100 MHz.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC 2011
Pages522-525
Number of pages4
Publication statusPublished - 2011 Dec 1
EventAsia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
Duration: 2011 Dec 52011 Dec 8

Other

OtherAsia-Pacific Microwave Conference, APMC 2011
CountryAustralia
CityMelbourne, VIC
Period11/12/511/12/8

Fingerprint

Gallium nitride
High electron mobility transistors
Power amplifiers
Transistors
Delta sigma modulation
Networks (circuits)
Switches

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Park, J. C., Yoo, C. S., Kang, W., Kim, D., Yook, J. G., & Lee, W. S. (2011). GaN HEMT based high efficiency push-pull inverse class-F power amplifier using chip-on-board technique. In Asia-Pacific Microwave Conference Proceedings, APMC 2011 (pp. 522-525). [6173802]
Park, Jun Chul ; Yoo, Chan Sei ; Kang, Wonshil ; Kim, Dongsu ; Yook, Jong Gwan ; Lee, Woo Sung. / GaN HEMT based high efficiency push-pull inverse class-F power amplifier using chip-on-board technique. Asia-Pacific Microwave Conference Proceedings, APMC 2011. 2011. pp. 522-525
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abstract = "This paper presents a high efficiency push-pull inverse class-F (class-F -1) power amplifier (PA) using a gallium nitride (GaN) transistor for class-S system - a digitally controlled by delta-sigma modulation. To enhance a drain efficiency of class-F -1 PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. A harmonic control circuit considering output intrinsic parameters of the transistor from switch-based model controls harmonics to extract pure fundamental frequency of the output signal. For a high efficiency push-pull operation, low loss rat-race baluns are integrated at input and output circuits. From the measured results for a continuous wave of 3.3 GHz, the class-F -1 PA shows a maximum output power of 35.5 dBm and a power gain of about 10 dB. Also, the proposed PA provides a high power-added-efficiency (PAE) of 64.2{\%} and a drain efficiency of 77.2{\%} at maximum output power. The drain efficiency is still remained over 75{\%} in the frequency range of 100 MHz.",
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Park, JC, Yoo, CS, Kang, W, Kim, D, Yook, JG & Lee, WS 2011, GaN HEMT based high efficiency push-pull inverse class-F power amplifier using chip-on-board technique. in Asia-Pacific Microwave Conference Proceedings, APMC 2011., 6173802, pp. 522-525, Asia-Pacific Microwave Conference, APMC 2011, Melbourne, VIC, Australia, 11/12/5.

GaN HEMT based high efficiency push-pull inverse class-F power amplifier using chip-on-board technique. / Park, Jun Chul; Yoo, Chan Sei; Kang, Wonshil; Kim, Dongsu; Yook, Jong Gwan; Lee, Woo Sung.

Asia-Pacific Microwave Conference Proceedings, APMC 2011. 2011. p. 522-525 6173802.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - This paper presents a high efficiency push-pull inverse class-F (class-F -1) power amplifier (PA) using a gallium nitride (GaN) transistor for class-S system - a digitally controlled by delta-sigma modulation. To enhance a drain efficiency of class-F -1 PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. A harmonic control circuit considering output intrinsic parameters of the transistor from switch-based model controls harmonics to extract pure fundamental frequency of the output signal. For a high efficiency push-pull operation, low loss rat-race baluns are integrated at input and output circuits. From the measured results for a continuous wave of 3.3 GHz, the class-F -1 PA shows a maximum output power of 35.5 dBm and a power gain of about 10 dB. Also, the proposed PA provides a high power-added-efficiency (PAE) of 64.2% and a drain efficiency of 77.2% at maximum output power. The drain efficiency is still remained over 75% in the frequency range of 100 MHz.

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Park JC, Yoo CS, Kang W, Kim D, Yook JG, Lee WS. GaN HEMT based high efficiency push-pull inverse class-F power amplifier using chip-on-board technique. In Asia-Pacific Microwave Conference Proceedings, APMC 2011. 2011. p. 522-525. 6173802