GaN HEMT-based hybrid current-mode class-S power amplifier for 955 MHz LTE signal

Jun Chul Park, Jong Gwan Yook, Bong Hyuk Park, Chan Sei Yoo, Dongsu Kim, Woo Sung Lee

Research output: Contribution to journalArticle

Abstract

This article presents a gallium nitride-based hybrid current-mode class-S (CMCS) power amplifier (PA) in conjunction with a realized band-pass delta-sigma modulator for 955 MHz long-term evolution (LTE) signal. Commercial surface mount Schottky diodes are located behind switching transistors to protect them against negative voltage swing, and performances are analyzed from the perspective of the variations of the output voltage and current waveforms by the intrinsic components of diode. In particular, the chip-on-board technique is adopted to enhance the drain efficiency, and the differential output filter and balun composed of lumped LC resonators are integrated at the back of the switching transistor to extract amplified LTE signal. From the measured results with an 8.5 dB peak to average power ratio 3G LTE 10 MHz input signal, the proposed CMCS PA shows maximum average output power of 37.1 and 32.2 dBm, and the resulting drain efficiencies of 35.5 and 38.5% with the drain voltage of 20 and 10 V, respectively.

Original languageEnglish
Pages (from-to)2118-2121
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume56
Issue number9
DOIs
Publication statusPublished - 2014 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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