GaN MESFETs for high-power and high-temperature microwave applications

Moo Whan Shin, R. J. Trew

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The potential of microwave GaN MESFETs is evaluated using a harmonic-balance RF simulator for high-power and high-temperature applications. The simulated device performance (DC I/V characteristics and small-signal power gain) of a GaN FET is in good agreement with experimental data. It is demonstrated that the excellent electrical properties of GaN make it a viable alternative to SiC for microwave high-power and high-temperature applications.

Original languageEnglish
Pages (from-to)498-500
Number of pages3
JournalElectronics Letters
Volume31
Issue number6
DOIs
Publication statusPublished - 1995 Mar 16

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High temperature applications
Microwaves
Field effect transistors
Electric properties
Simulators
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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GaN MESFETs for high-power and high-temperature microwave applications. / Shin, Moo Whan; Trew, R. J.

In: Electronics Letters, Vol. 31, No. 6, 16.03.1995, p. 498-500.

Research output: Contribution to journalArticle

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