Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

H. K. Moon, S. J. Lee, J. Yoon, H. Kim, N. E. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

Original languageEnglish
Pages (from-to)2961-2965
Number of pages5
JournalMaterials Research Bulletin
Volume47
Issue number10
DOIs
Publication statusPublished - 2012 Oct

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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