Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

H. K. Moon, S. J. Lee, J. Yoon, Hyungjun Kim, N. E. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

Original languageEnglish
Pages (from-to)2961-2965
Number of pages5
JournalMaterials Research Bulletin
Volume47
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Thin films
thin films
Intermetallics
intermetallics
aspect ratio
Aspect ratio
delivery
Multilayers
Annealing
electrical resistivity
annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Moon, H. K. ; Lee, S. J. ; Yoon, J. ; Kim, Hyungjun ; Lee, N. E. / Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition. In: Materials Research Bulletin. 2012 ; Vol. 47, No. 10. pp. 2961-2965.
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Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition. / Moon, H. K.; Lee, S. J.; Yoon, J.; Kim, Hyungjun; Lee, N. E.

In: Materials Research Bulletin, Vol. 47, No. 10, 01.10.2012, p. 2961-2965.

Research output: Contribution to journalArticle

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