In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.
|Number of pages||5|
|Journal||Materials Research Bulletin|
|Publication status||Published - 2012 Oct|
Bibliographical noteFunding Information:
This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . This research was also supported by the Korea Institute for the Advancement of Technology (KIAT) through the Human Resource Training Project for Strategic Technology.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering