Gas molecule sensing of van der Waals tunnel field effect transistors

Hong Kyw Choi; Jaesung Park; Nojoon Myoung; Ho Jong Kim; Jin Sik Choi; Young Kyu Choi; Chi Young Hwang; Jin Tae Kim; Serin Park; Yoonsik Yi; Soo Kyung Chang; Hee Chul Park; Chanyong Hwang; Choon Gi Choi; Young Jun Yu

doi:10.1039/c7nr05712a

Gas molecule sensing of van der Waals tunnel field effect transistors

Hong Kyw Choi, Jaesung Park, Nojoon Myoung, Ho Jong Kim, Jin Sik Choi, Young Kyu Choi, Chi Young Hwang, Jin Tae Kim, Serin Park, Yoonsik Yi, Soo Kyung Chang, Hee Chul Park, Chanyong Hwang, Choon Gi Choi, Young Jun Yu

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

van der Waals (vdW) heterostructures with two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) allow us to demonstrate atomically thin field-effect transistors (FETs), photodetectors (PDs) and photovoltaic devices capable of higher performance and greater stability levels than conventional devices. Although there have been studies of gas molecule sensing with 2D crystal channels, vdW heterostructures based on 2D crystals have not been employed thus far. Here, utilizing graphene/WS₂/graphene (G/WS₂/G) vdW heterostructure tunnel FETs, we demonstrate the rectification behavior of the sensitivity signal by tuning the WS₂ potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.

Original language	English
Pages (from-to)	18644-18650
Number of pages	7
Journal	Nanoscale
Volume	9
Issue number	47
DOIs	https://doi.org/10.1039/c7nr05712a
Publication status	Published - 2017 Dec 21

Bibliographical note

Funding Information:
This work was supported by the Creative Research Program (16ZB1810) of ETRI, Korea and Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (2016-0-00576, Fundamental Technologies of two-dimensional materials and devices for the platform of new-functional smart devices). N. M and H. C. P thank the institute for Basic Science project (IBS-R024-D1).

Publisher Copyright:
© 2017 The Royal Society of Chemistry.

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Materials Science(all)

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This output contributes to the following Sustainable Development Goal(s)

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Choi, Hong Kyw ; Park, Jaesung ; Myoung, Nojoon ; Kim, Ho Jong ; Choi, Jin Sik ; Choi, Young Kyu ; Hwang, Chi Young ; Kim, Jin Tae ; Park, Serin ; Yi, Yoonsik ; Chang, Soo Kyung ; Park, Hee Chul ; Hwang, Chanyong ; Choi, Choon Gi ; Yu, Young Jun. / Gas molecule sensing of van der Waals tunnel field effect transistors. In: Nanoscale. 2017 ; Vol. 9, No. 47. pp. 18644-18650.

@article{8b565b21122044cfb8bda15f17373ff9,

title = "Gas molecule sensing of van der Waals tunnel field effect transistors",

abstract = "van der Waals (vdW) heterostructures with two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) allow us to demonstrate atomically thin field-effect transistors (FETs), photodetectors (PDs) and photovoltaic devices capable of higher performance and greater stability levels than conventional devices. Although there have been studies of gas molecule sensing with 2D crystal channels, vdW heterostructures based on 2D crystals have not been employed thus far. Here, utilizing graphene/WS2/graphene (G/WS2/G) vdW heterostructure tunnel FETs, we demonstrate the rectification behavior of the sensitivity signal by tuning the WS2 potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.",

author = "Choi, {Hong Kyw} and Jaesung Park and Nojoon Myoung and Kim, {Ho Jong} and Choi, {Jin Sik} and Choi, {Young Kyu} and Hwang, {Chi Young} and Kim, {Jin Tae} and Serin Park and Yoonsik Yi and Chang, {Soo Kyung} and Park, {Hee Chul} and Chanyong Hwang and Choi, {Choon Gi} and Yu, {Young Jun}",

note = "Funding Information: This work was supported by the Creative Research Program (16ZB1810) of ETRI, Korea and Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (2016-0-00576, Fundamental Technologies of two-dimensional materials and devices for the platform of new-functional smart devices). N. M and H. C. P thank the institute for Basic Science project (IBS-R024-D1). Publisher Copyright: {\textcopyright} 2017 The Royal Society of Chemistry.",

year = "2017",

month = dec,

day = "21",

doi = "10.1039/c7nr05712a",

language = "English",

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journal = "Nanoscale",

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Gas molecule sensing of van der Waals tunnel field effect transistors. / Choi, Hong Kyw; Park, Jaesung; Myoung, Nojoon; Kim, Ho Jong; Choi, Jin Sik; Choi, Young Kyu; Hwang, Chi Young; Kim, Jin Tae; Park, Serin; Yi, Yoonsik; Chang, Soo Kyung; Park, Hee Chul; Hwang, Chanyong; Choi, Choon Gi; Yu, Young Jun.

In: Nanoscale, Vol. 9, No. 47, 21.12.2017, p. 18644-18650.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Gas molecule sensing of van der Waals tunnel field effect transistors

AU - Choi, Hong Kyw

AU - Park, Jaesung

AU - Myoung, Nojoon

AU - Kim, Ho Jong

AU - Choi, Jin Sik

AU - Choi, Young Kyu

AU - Hwang, Chi Young

AU - Kim, Jin Tae

AU - Park, Serin

AU - Yi, Yoonsik

AU - Chang, Soo Kyung

AU - Park, Hee Chul

AU - Hwang, Chanyong

AU - Choi, Choon Gi

AU - Yu, Young Jun

N1 - Funding Information: This work was supported by the Creative Research Program (16ZB1810) of ETRI, Korea and Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (2016-0-00576, Fundamental Technologies of two-dimensional materials and devices for the platform of new-functional smart devices). N. M and H. C. P thank the institute for Basic Science project (IBS-R024-D1). Publisher Copyright: © 2017 The Royal Society of Chemistry.

PY - 2017/12/21

Y1 - 2017/12/21

N2 - van der Waals (vdW) heterostructures with two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) allow us to demonstrate atomically thin field-effect transistors (FETs), photodetectors (PDs) and photovoltaic devices capable of higher performance and greater stability levels than conventional devices. Although there have been studies of gas molecule sensing with 2D crystal channels, vdW heterostructures based on 2D crystals have not been employed thus far. Here, utilizing graphene/WS2/graphene (G/WS2/G) vdW heterostructure tunnel FETs, we demonstrate the rectification behavior of the sensitivity signal by tuning the WS2 potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.

AB - van der Waals (vdW) heterostructures with two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) allow us to demonstrate atomically thin field-effect transistors (FETs), photodetectors (PDs) and photovoltaic devices capable of higher performance and greater stability levels than conventional devices. Although there have been studies of gas molecule sensing with 2D crystal channels, vdW heterostructures based on 2D crystals have not been employed thus far. Here, utilizing graphene/WS2/graphene (G/WS2/G) vdW heterostructure tunnel FETs, we demonstrate the rectification behavior of the sensitivity signal by tuning the WS2 potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.

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U2 - 10.1039/c7nr05712a

DO - 10.1039/c7nr05712a

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AN - SCOPUS:85038385032

VL - 9

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EP - 18650

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 47

ER -

Gas molecule sensing of van der Waals tunnel field effect transistors

Abstract

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