Abstract
A simple, non-catalytic synthetic route for SiC/SiO 2 core-shell heterostructure nanowires (SiC/SiO 2 NWs) is presented, which involves establishment of separate regions for source gas decomposition and NW deposition in a chemical vapour deposition tube reactor. The O 2 flow rate controlled the NW diameter, which could be varied in the range 30-490 nm, and also allowed adjustment of the core-shell diameter ratio. The NW length directly increased with deposition time. The SiC core possessed a smooth spiral structure that grew in the [111] direction via a screw dislocation mechanism. The factors determining the core-shell diameter ratio, predominant species in each temperature region, and sequence of SiO 2 shell formation were identified by thermodynamic calculations. We expect this new simple synthetic route to be useful in producing other heterostructure materials with compositional ordering.
Original language | English |
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Pages (from-to) | 1737-1743 |
Number of pages | 7 |
Journal | CrystEngComm |
Volume | 14 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2012 Mar 7 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics