Abstract
A simple, non-catalytic synthetic route for SiC/SiO 2 core-shell heterostructure nanowires (SiC/SiO 2 NWs) is presented, which involves establishment of separate regions for source gas decomposition and NW deposition in a chemical vapour deposition tube reactor. The O 2 flow rate controlled the NW diameter, which could be varied in the range 30-490 nm, and also allowed adjustment of the core-shell diameter ratio. The NW length directly increased with deposition time. The SiC core possessed a smooth spiral structure that grew in the [111] direction via a screw dislocation mechanism. The factors determining the core-shell diameter ratio, predominant species in each temperature region, and sequence of SiO 2 shell formation were identified by thermodynamic calculations. We expect this new simple synthetic route to be useful in producing other heterostructure materials with compositional ordering.
| Original language | English |
|---|---|
| Pages (from-to) | 1737-1743 |
| Number of pages | 7 |
| Journal | CrystEngComm |
| Volume | 14 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2012 Mar 7 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
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Gas-phase synthesis and growth mechanism of SiC/SiO 2 core-shell nanowires. / Choi, Yoo Youl; Park, Si Jung; Choi, Doo Jin.
In: CrystEngComm, Vol. 14, No. 5, 07.03.2012, p. 1737-1743.Research output: Contribution to journal › Article
TY - JOUR
T1 - Gas-phase synthesis and growth mechanism of SiC/SiO 2 core-shell nanowires
AU - Choi, Yoo Youl
AU - Park, Si Jung
AU - Choi, Doo Jin
PY - 2012/3/7
Y1 - 2012/3/7
N2 - A simple, non-catalytic synthetic route for SiC/SiO 2 core-shell heterostructure nanowires (SiC/SiO 2 NWs) is presented, which involves establishment of separate regions for source gas decomposition and NW deposition in a chemical vapour deposition tube reactor. The O 2 flow rate controlled the NW diameter, which could be varied in the range 30-490 nm, and also allowed adjustment of the core-shell diameter ratio. The NW length directly increased with deposition time. The SiC core possessed a smooth spiral structure that grew in the [111] direction via a screw dislocation mechanism. The factors determining the core-shell diameter ratio, predominant species in each temperature region, and sequence of SiO 2 shell formation were identified by thermodynamic calculations. We expect this new simple synthetic route to be useful in producing other heterostructure materials with compositional ordering.
AB - A simple, non-catalytic synthetic route for SiC/SiO 2 core-shell heterostructure nanowires (SiC/SiO 2 NWs) is presented, which involves establishment of separate regions for source gas decomposition and NW deposition in a chemical vapour deposition tube reactor. The O 2 flow rate controlled the NW diameter, which could be varied in the range 30-490 nm, and also allowed adjustment of the core-shell diameter ratio. The NW length directly increased with deposition time. The SiC core possessed a smooth spiral structure that grew in the [111] direction via a screw dislocation mechanism. The factors determining the core-shell diameter ratio, predominant species in each temperature region, and sequence of SiO 2 shell formation were identified by thermodynamic calculations. We expect this new simple synthetic route to be useful in producing other heterostructure materials with compositional ordering.
UR - http://www.scopus.com/inward/record.url?scp=84863115796&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863115796&partnerID=8YFLogxK
U2 - 10.1039/c2ce06452a
DO - 10.1039/c2ce06452a
M3 - Article
AN - SCOPUS:84863115796
VL - 14
SP - 1737
EP - 1743
JO - CrystEngComm
JF - CrystEngComm
SN - 1466-8033
IS - 5
ER -