Abstract
A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).
| Original language | English |
|---|---|
| Pages (from-to) | e235-e238 |
| Journal | Current Applied Physics |
| Volume | 9 |
| Issue number | 4 SUPPL. |
| DOIs | |
| Publication status | Published - 2009 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Gas sensing properties of WO3 doped rutile TiO2 thick film at high operating temperature. / Jo, Sung Eun; Kang, Byeong Geun; Heo, Sungmoo; Song, Soonho; Kim, Yong Jun.
In: Current Applied Physics, Vol. 9, No. 4 SUPPL., 01.07.2009, p. e235-e238.Research output: Contribution to journal › Article
TY - JOUR
T1 - Gas sensing properties of WO3 doped rutile TiO2 thick film at high operating temperature
AU - Jo, Sung Eun
AU - Kang, Byeong Geun
AU - Heo, Sungmoo
AU - Song, Soonho
AU - Kim, Yong Jun
PY - 2009/7/1
Y1 - 2009/7/1
N2 - A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).
AB - A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).
UR - http://www.scopus.com/inward/record.url?scp=71849119784&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71849119784&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2009.06.053
DO - 10.1016/j.cap.2009.06.053
M3 - Article
AN - SCOPUS:71849119784
VL - 9
SP - e235-e238
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 4 SUPPL.
ER -