Gas sensing properties of WO3 doped rutile TiO2 thick film at high operating temperature

Sung Eun Jo; Byeong Geun Kang; Sungmoo Heo; Soonho Song; Yong Jun Kim

doi:10.1016/j.cap.2009.06.053

Gas sensing properties of WO₃ doped rutile TiO₂ thick film at high operating temperature

Sung Eun Jo, Byeong Geun Kang, Sungmoo Heo, Soonho Song, Yong Jun Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

A semiconductor gas sensor based on WO₃ doped TiO₂ having a rutile phase was fabricated on an Al₂O₃ substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO₂ layer was doped with WO₃ to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO₂ and other oxidizing gases (CO, O₂ and CO₂) at high operating temperature (600 °C).

Original language	English
Pages (from-to)	e235-e238
Journal	Current Applied Physics
Volume	9
Issue number	4 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2009.06.053
Publication status	Published - 2009 Jul

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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title = "Gas sensing properties of WO3 doped rutile TiO2 thick film at high operating temperature",

abstract = "A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).",

author = "Jo, {Sung Eun} and Kang, {Byeong Geun} and Sungmoo Heo and Soonho Song and Kim, {Yong Jun}",

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AU - Jo, Sung Eun

AU - Kang, Byeong Geun

AU - Heo, Sungmoo

AU - Song, Soonho

AU - Kim, Yong Jun

PY - 2009/7

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N2 - A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).

AB - A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).

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