Gas sensing properties of WO3 doped rutile TiO2 thick film at high operating temperature

Sung Eun Jo; Byeong Geun Kang; Sungmoo Heo; Soonho Song; Yong Jun Kim

doi:10.1016/j.cap.2009.06.053

Gas sensing properties of WO₃ doped rutile TiO₂ thick film at high operating temperature

Sung Eun Jo, Byeong Geun Kang, Sungmoo Heo, Soonho Song, Yong Jun Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A semiconductor gas sensor based on WO₃ doped TiO₂ having a rutile phase was fabricated on an Al₂O₃ substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO₂ layer was doped with WO₃ to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO₂ and other oxidizing gases (CO, O₂ and CO₂) at high operating temperature (600 °C).

Original language	English
Pages (from-to)	e235-e238
Journal	Current Applied Physics
Volume	9
Issue number	4 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2009.06.053
Publication status	Published - 2009 Jul

Bibliographical note

Funding Information:
This work was supported in part by the Information Technology Research Center support program (IITA-2005-C1090-0592-0012), and in part by Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MEST) (2008-8-1253).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2009.06.053

Cite this

@article{3b97ce4f058e42bcbe3f807a2a7cc0a2,

title = "Gas sensing properties of WO3 doped rutile TiO2 thick film at high operating temperature",

abstract = "A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).",

author = "Jo, {Sung Eun} and Kang, {Byeong Geun} and Sungmoo Heo and Soonho Song and Kim, {Yong Jun}",

note = "Funding Information: This work was supported in part by the Information Technology Research Center support program (IITA-2005-C1090-0592-0012), and in part by Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MEST) (2008-8-1253). ",

year = "2009",

month = jul,

doi = "10.1016/j.cap.2009.06.053",

language = "English",

volume = "9",

pages = "e235--e238",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "4 SUPPL.",

}

TY - JOUR

T1 - Gas sensing properties of WO3 doped rutile TiO2 thick film at high operating temperature

AU - Jo, Sung Eun

AU - Kang, Byeong Geun

AU - Heo, Sungmoo

AU - Song, Soonho

AU - Kim, Yong Jun

N1 - Funding Information: This work was supported in part by the Information Technology Research Center support program (IITA-2005-C1090-0592-0012), and in part by Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MEST) (2008-8-1253).

PY - 2009/7

Y1 - 2009/7

N2 - A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).

AB - A semiconductor gas sensor based on WO3 doped TiO2 having a rutile phase was fabricated on an Al2O3 substrate. The sensing film of the sensor was deposited by using screen printing. In order to enhance the sensitivity of the sensor, the sensing film was fabricated with a porous shape by high temperature heat treatment and the TiO2 layer was doped with WO3 to improve the gas selectivity. The surface topography and inner morphological properties of the sensing film were characterized with scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The gas sensing properties of the fabricated sensor were evaluated by detecting NO2 and other oxidizing gases (CO, O2 and CO2) at high operating temperature (600 °C).

UR - http://www.scopus.com/inward/record.url?scp=71849119784&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849119784&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2009.06.053

DO - 10.1016/j.cap.2009.06.053

M3 - Article

AN - SCOPUS:71849119784

VL - 9

SP - e235-e238

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 4 SUPPL.

ER -