Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors

I. K. Han, J. I. Lee, M. B. Lee, S. K. Chang, E. K. Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this report, existing models for low-frequency excess electrical noise in poly-Si thin-film transistors are scrutinized and a new model is proposed, in particular, for larg-grain poly-crystalline thin-film transistors. Major noise sources are considered to be located in the grain boundary region, and the grain boundary is modeled as two independent Schottky diodes connected face-to-face. As the gate bias increases, the grain boundary barrier height decreases and the conduction and therefore the noise generation in the grain bulk region become important. Therefore, at low gate bias, grain boundary plays an important role in conduction and noise generation, and at high bias, the number fluctuation involving the oxide traps leading to flat band fluctuation ('unified model' for crystalline-Si MOSFETs) will dominate the noise generation. We calculated the critical gate bias (or barrier height) that severs these two different noise generation regimes. Recently reported experimental results are explained by using this model.

Original languageEnglish
Pages (from-to)S949-S954
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec 1

Fingerprint

transistors
low frequencies
thin films
grain boundaries
conduction
Schottky diodes
field effect transistors
traps
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Han, I. K. ; Lee, J. I. ; Lee, M. B. ; Chang, S. K. ; Kim, E. K. / Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors. In: Journal of the Korean Physical Society. 2004 ; Vol. 45, No. SUPPL. pp. S949-S954.
@article{70fb5fc952464678955bce9bef7d9dbd,
title = "Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors",
abstract = "In this report, existing models for low-frequency excess electrical noise in poly-Si thin-film transistors are scrutinized and a new model is proposed, in particular, for larg-grain poly-crystalline thin-film transistors. Major noise sources are considered to be located in the grain boundary region, and the grain boundary is modeled as two independent Schottky diodes connected face-to-face. As the gate bias increases, the grain boundary barrier height decreases and the conduction and therefore the noise generation in the grain bulk region become important. Therefore, at low gate bias, grain boundary plays an important role in conduction and noise generation, and at high bias, the number fluctuation involving the oxide traps leading to flat band fluctuation ('unified model' for crystalline-Si MOSFETs) will dominate the noise generation. We calculated the critical gate bias (or barrier height) that severs these two different noise generation regimes. Recently reported experimental results are explained by using this model.",
author = "Han, {I. K.} and Lee, {J. I.} and Lee, {M. B.} and Chang, {S. K.} and Kim, {E. K.}",
year = "2004",
month = "12",
day = "1",
language = "English",
volume = "45",
pages = "S949--S954",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL.",

}

Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors. / Han, I. K.; Lee, J. I.; Lee, M. B.; Chang, S. K.; Kim, E. K.

In: Journal of the Korean Physical Society, Vol. 45, No. SUPPL., 01.12.2004, p. S949-S954.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors

AU - Han, I. K.

AU - Lee, J. I.

AU - Lee, M. B.

AU - Chang, S. K.

AU - Kim, E. K.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - In this report, existing models for low-frequency excess electrical noise in poly-Si thin-film transistors are scrutinized and a new model is proposed, in particular, for larg-grain poly-crystalline thin-film transistors. Major noise sources are considered to be located in the grain boundary region, and the grain boundary is modeled as two independent Schottky diodes connected face-to-face. As the gate bias increases, the grain boundary barrier height decreases and the conduction and therefore the noise generation in the grain bulk region become important. Therefore, at low gate bias, grain boundary plays an important role in conduction and noise generation, and at high bias, the number fluctuation involving the oxide traps leading to flat band fluctuation ('unified model' for crystalline-Si MOSFETs) will dominate the noise generation. We calculated the critical gate bias (or barrier height) that severs these two different noise generation regimes. Recently reported experimental results are explained by using this model.

AB - In this report, existing models for low-frequency excess electrical noise in poly-Si thin-film transistors are scrutinized and a new model is proposed, in particular, for larg-grain poly-crystalline thin-film transistors. Major noise sources are considered to be located in the grain boundary region, and the grain boundary is modeled as two independent Schottky diodes connected face-to-face. As the gate bias increases, the grain boundary barrier height decreases and the conduction and therefore the noise generation in the grain bulk region become important. Therefore, at low gate bias, grain boundary plays an important role in conduction and noise generation, and at high bias, the number fluctuation involving the oxide traps leading to flat band fluctuation ('unified model' for crystalline-Si MOSFETs) will dominate the noise generation. We calculated the critical gate bias (or barrier height) that severs these two different noise generation regimes. Recently reported experimental results are explained by using this model.

UR - http://www.scopus.com/inward/record.url?scp=12744280151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12744280151&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:12744280151

VL - 45

SP - S949-S954

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL.

ER -