Gate control and amplification of magnetoresistance in a three-terminal device

Hyun Kum; Shafat Jahangir; Debashish Basu; Dipankar Saha; Pallab Bhattacharya

doi:10.1063/1.3652765

Gate control and amplification of magnetoresistance in a three-terminal device

Hyun Kum, Shafat Jahangir, Debashish Basu, Dipankar Saha, Pallab Bhattacharya

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500 at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently.

Original language	English
Article number	152503
Journal	Applied Physics Letters
Volume	99
Issue number	15
DOIs	https://doi.org/10.1063/1.3652765
Publication status	Published - 2011 Oct 10

Bibliographical note

Funding Information:
This work is supported by the Office of Naval Research under Grant N00014-09-1-0086.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3652765

Cite this

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abstract = "Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500 at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently.",

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T1 - Gate control and amplification of magnetoresistance in a three-terminal device

AU - Kum, Hyun

AU - Jahangir, Shafat

AU - Basu, Debashish

AU - Saha, Dipankar

AU - Bhattacharya, Pallab

N1 - Funding Information: This work is supported by the Office of Naval Research under Grant N00014-09-1-0086.

PY - 2011/10/10

Y1 - 2011/10/10

N2 - Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500 at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently.

AB - Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500 at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently.

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Gate control and amplification of magnetoresistance in a three-terminal device

Abstract

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