Gate-controlled transport in GaN nanowire devices with high- k Si3N4 gate dielectrics

Jae Woong Lee, Moon Ho Ham, Jae Min Myoung

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The high dielectric constant layer, Si3N4, was applied to the GaN nanowire devices. Single-crystalline wurtzite GaN nanowires prepared by the vapor-liquid-solid method were utilized to fabricate GaN nanowire field-effect transistor structures with Si3N4 and SiO2 dielectric layers in order to investigate the effect of a high-k dielectric layer on the electrical characteristics of the GaN nanowires. By applying high-k gate dielectrics to GaN nanowire devices, higher drain current, lower subthreshold swing, and threshold voltage shift were obtained in spite of the slight degradation of the channel mobility due to the surface phonon scattering and the electrical scattering at fixed charges and trapped charges.

Original languageEnglish
Pages (from-to)327-331
Number of pages5
JournalSolid State Communications
Volume145
Issue number7-8
DOIs
Publication statusPublished - 2008 Feb 1

Fingerprint

Gate dielectrics
Nanowires
nanowires
Phonon scattering
Drain current
Field effect transistors
scattering
Threshold voltage
wurtzite
threshold voltage
high current
Permittivity
field effect transistors
Vapors
Scattering
vapors
permittivity
degradation
Crystalline materials
Degradation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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abstract = "The high dielectric constant layer, Si3N4, was applied to the GaN nanowire devices. Single-crystalline wurtzite GaN nanowires prepared by the vapor-liquid-solid method were utilized to fabricate GaN nanowire field-effect transistor structures with Si3N4 and SiO2 dielectric layers in order to investigate the effect of a high-k dielectric layer on the electrical characteristics of the GaN nanowires. By applying high-k gate dielectrics to GaN nanowire devices, higher drain current, lower subthreshold swing, and threshold voltage shift were obtained in spite of the slight degradation of the channel mobility due to the surface phonon scattering and the electrical scattering at fixed charges and trapped charges.",
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Gate-controlled transport in GaN nanowire devices with high- k Si3N4 gate dielectrics. / Lee, Jae Woong; Ham, Moon Ho; Myoung, Jae Min.

In: Solid State Communications, Vol. 145, No. 7-8, 01.02.2008, p. 327-331.

Research output: Contribution to journalArticle

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AB - The high dielectric constant layer, Si3N4, was applied to the GaN nanowire devices. Single-crystalline wurtzite GaN nanowires prepared by the vapor-liquid-solid method were utilized to fabricate GaN nanowire field-effect transistor structures with Si3N4 and SiO2 dielectric layers in order to investigate the effect of a high-k dielectric layer on the electrical characteristics of the GaN nanowires. By applying high-k gate dielectrics to GaN nanowire devices, higher drain current, lower subthreshold swing, and threshold voltage shift were obtained in spite of the slight degradation of the channel mobility due to the surface phonon scattering and the electrical scattering at fixed charges and trapped charges.

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