The high dielectric constant layer, Si3N4, was applied to the GaN nanowire devices. Single-crystalline wurtzite GaN nanowires prepared by the vapor-liquid-solid method were utilized to fabricate GaN nanowire field-effect transistor structures with Si3N4 and SiO2 dielectric layers in order to investigate the effect of a high-k dielectric layer on the electrical characteristics of the GaN nanowires. By applying high-k gate dielectrics to GaN nanowire devices, higher drain current, lower subthreshold swing, and threshold voltage shift were obtained in spite of the slight degradation of the channel mobility due to the surface phonon scattering and the electrical scattering at fixed charges and trapped charges.
Bibliographical noteFunding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD). (KRF-2005-041-D00402).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry