Gate dielectric dependent on pentacene growth and electrical stability in OTFTs

Kim Chang Su, Jo Sung Jin, Lee Sung Won, Baik Hong Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the effects of modifying the gate dielectrics by spin coating of HMDS, PVP and PVA which cause different surface energy and surface roughness owing to the different functional groups. In changing the surface state with applying various surface treatments, I-V and C-V measurements of the OTFTs were performed. The PVP-coated OTFTs, which has smoother and lesser amount of OH-groups on the gate dielectric surface, showed enhanced pentacene growth and nearly free hysteresis behavior than that of the HMDS and PVA-coated OTFTs.

Original languageEnglish
Title of host publicationOrganic Electronics
Subtitle of host publicationMaterials, Devices and Applications
Pages312-316
Number of pages5
Publication statusPublished - 2006 Dec 1
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume965
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/12/1

Fingerprint

Gate dielectrics
Spin coating
Surface states
surface treatment
Interfacial energy
Functional groups
surface energy
Hysteresis
Surface treatment
coating
surface roughness
roughness
Surface roughness
hysteresis
causes
pentacene
hydroxide ion

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Su, K. C., Jin, J. S., Won, L. S., & Koo, B. H. (2006). Gate dielectric dependent on pentacene growth and electrical stability in OTFTs. In Organic Electronics: Materials, Devices and Applications (pp. 312-316). (Materials Research Society Symposium Proceedings; Vol. 965).
Su, Kim Chang ; Jin, Jo Sung ; Won, Lee Sung ; Koo, Baik Hong. / Gate dielectric dependent on pentacene growth and electrical stability in OTFTs. Organic Electronics: Materials, Devices and Applications. 2006. pp. 312-316 (Materials Research Society Symposium Proceedings).
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Su, KC, Jin, JS, Won, LS & Koo, BH 2006, Gate dielectric dependent on pentacene growth and electrical stability in OTFTs. in Organic Electronics: Materials, Devices and Applications. Materials Research Society Symposium Proceedings, vol. 965, pp. 312-316, 2006 MRS Fall Meeting, Boston, MA, United States, 06/11/27.

Gate dielectric dependent on pentacene growth and electrical stability in OTFTs. / Su, Kim Chang; Jin, Jo Sung; Won, Lee Sung; Koo, Baik Hong.

Organic Electronics: Materials, Devices and Applications. 2006. p. 312-316 (Materials Research Society Symposium Proceedings; Vol. 965).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - We report on the effects of modifying the gate dielectrics by spin coating of HMDS, PVP and PVA which cause different surface energy and surface roughness owing to the different functional groups. In changing the surface state with applying various surface treatments, I-V and C-V measurements of the OTFTs were performed. The PVP-coated OTFTs, which has smoother and lesser amount of OH-groups on the gate dielectric surface, showed enhanced pentacene growth and nearly free hysteresis behavior than that of the HMDS and PVA-coated OTFTs.

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Su KC, Jin JS, Won LS, Koo BH. Gate dielectric dependent on pentacene growth and electrical stability in OTFTs. In Organic Electronics: Materials, Devices and Applications. 2006. p. 312-316. (Materials Research Society Symposium Proceedings).