Gate dielectric dependent on pentacene growth and electrical stability in OTFTs

Kim Chang Su, Jo Sung Jin, Lee Sung Won, Baik Hong Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the effects of modifying the gate dielectrics by spin coating of HMDS, PVP and PVA which cause different surface energy and surface roughness owing to the different functional groups. In changing the surface state with applying various surface treatments, I-V and C-V measurements of the OTFTs were performed. The PVP-coated OTFTs, which has smoother and lesser amount of OH-groups on the gate dielectric surface, showed enhanced pentacene growth and nearly free hysteresis behavior than that of the HMDS and PVA-coated OTFTs.

Original languageEnglish
Title of host publicationOrganic Electronics
Subtitle of host publicationMaterials, Devices and Applications
Pages312-316
Number of pages5
Publication statusPublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume965
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/12/1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Gate dielectric dependent on pentacene growth and electrical stability in OTFTs'. Together they form a unique fingerprint.

Cite this