Gate effect on hall voltage in a INSB/FM device

W. Y. Kim, Joonyeon Chang, S. H. Han, W. Y. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationINTERMAG ASIA 2005
Subtitle of host publicationDigests of the IEEE International Magnetics Conference
Number of pages1
Publication statusPublished - 2005 Dec 12
EventINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference - Nagoya, Japan
Duration: 2005 Apr 42005 Apr 8

Publication series

NameINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Other

OtherINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
CountryJapan
CityNagoya
Period05/4/405/4/8

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, W. Y., Chang, J., Han, S. H., & Lee, W. Y. (2005). Gate effect on hall voltage in a INSB/FM device. In INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference (INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference).