Gate insulator inhomogeneity in thin film transistors having a polycrystalline silicon layer prepared directly by catalytic chemical vapor deposition at a low temperature

Hyun Jun Cho, Wan Shick Hong, Sung Hyun Lee, Tae Hwan Kim, Kyung Min Lee, Kyung Bae Park, Ji Sim Jung, Jang Yeon Kwon

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4 Citations (Scopus)

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