Gate oxide integrity (GOI) of MOS transistors with W/TiN stacked gate

D. H. Lee, K. H. Yeom, M. H. Cho, N. S. Kang, T. E. Shim

Research output: Contribution to journalConference article

25 Citations (Scopus)

Abstract

With W/TiN stack gate deposited at high temperature, excellent TDDB characteristics of gate oxide are obtained on MOS capacitors. In case of negative gate bias where thin oxide reliability becomes critical, TiN gate provides much longer time to breakdown than that of n+poly gate due to larger barrier height and less F-N tunneling current. In spite of skipping conventional reoxidation process, breakdown field larger than 10MV/cm could be obtained in MOS transistors by undercutting TiN with H2SO4 boiling. With double spacer and undercutting scheme, the short channel effect of NMOS and PMOS transistors could be suppressed up to Lgateapprox.0.3 μm.

Original languageEnglish
Pages (from-to)208-209
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1996
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1996 Jun 111996 Jun 13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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