Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

Dae Hong Ko, N. I. Lee, Y. W. Kim, M. Y. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalThin Solid Films
Volume326
Issue number1-2
DOIs
Publication statusPublished - 1998 Aug 4

Fingerprint

metal oxide semiconductors
integrity
Oxides
Metals
oxides
Semiconductor diodes
Thermal cycling
Polysilicon
semiconductor diodes
Pyrolysis
thermal degradation
Oxide semiconductors
Defects
breakdown
traps
cycles
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{7d1de1e6c22942269b95fa6c9bb47648,
title = "Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications",
abstract = "We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.",
author = "Ko, {Dae Hong} and Lee, {N. I.} and Kim, {Y. W.} and Lee, {M. Y.}",
year = "1998",
month = "8",
day = "4",
doi = "10.1016/S0040-6090(98)00757-3",
language = "English",
volume = "326",
pages = "56--59",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications. / Ko, Dae Hong; Lee, N. I.; Kim, Y. W.; Lee, M. Y.

In: Thin Solid Films, Vol. 326, No. 1-2, 04.08.1998, p. 56-59.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

AU - Ko, Dae Hong

AU - Lee, N. I.

AU - Kim, Y. W.

AU - Lee, M. Y.

PY - 1998/8/4

Y1 - 1998/8/4

N2 - We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.

AB - We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.

UR - http://www.scopus.com/inward/record.url?scp=0032482913&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032482913&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(98)00757-3

DO - 10.1016/S0040-6090(98)00757-3

M3 - Article

VL - 326

SP - 56

EP - 59

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -