Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

D. H. Ko, N. I. Lee, Y. W. Kim, M. Y. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of the Ti-diffusion, Qbd values of the MOS diodes with Ti-polycide gates decrease, which is due to the increase of the trap densities in gate oxides by the diffusion and subsequent incorporation of Ti in gate oxides. As the diffusion of Ti continues, the initial breakdown of gate oxides at the low-fields occur due to the formation of the gross-defects.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalThin Solid Films
Volume326
Issue number1-2
DOIs
Publication statusPublished - 1998 Aug 4

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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