Gate Quantum Capacitance Effects in Nanoscale Transistors

Sujay B. Desai, Hossain M. Fahad, Theodor Lundberg, Gregory Pitner, Hyungjin Kim, Daryl Chrzan, H. S.Philip Wong, Ali Javey

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

As the physical dimensions of a transistor gate continue to shrink to a few atoms, performance can be increasingly determined by the limited electronic density of states (DOS) in the gate and the gate quantum capacitance (CQ). We demonstrate the impact of gate CQ and the dimensionality of the gate electrode on the performance of nanoscale transistors through analytical electrostatics modeling. For low-dimensional gates, the gate charge can limit the channel charge, and the transfer characteristics of the device become dependent on the gate DOS. We experimentally observe for the first time, room-temperature gate quantization features in the transfer characteristics of single-walled carbon nanotube (CNT)-gated ultrathin silicon-on-insulator (SOI) channel transistors; features which can be attributed to the Van Hove singularities in the one-dimensional DOS of the CNT gate. In addition to being an important aspect of future transistor design, potential applications of this phenomenon include multilevel transistors with suitable transfer characteristics obtained via engineered gate DOS.

Original languageEnglish
Pages (from-to)7130-7137
Number of pages8
JournalNano letters
Volume19
Issue number10
DOIs
Publication statusPublished - 2019 Oct 9

Bibliographical note

Funding Information:
The authors would like to thank Prof. Tsu-Jae King Liu, Juan Pablo Llinas and Dr. Angada Sachid for useful discussions. This work was supported by the Electronics Materials program funded by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. S.B.D. would like to acknowledge support from the Lam Research Graduate Fellowship.

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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