We demonstrate infrared photodetectors based on graphene-Bi2Se3 heterostructures with high responsivity (≥1.9 A/W) at room temperature. Strong photogating effect across the tunneling barrier and built-in potential enables the internal quantum efficiency larger than 100 %.
|Title of host publication||2016 Conference on Lasers and Electro-Optics, CLEO 2016|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2016 Dec 16|
|Event||2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States|
Duration: 2016 Jun 5 → 2016 Jun 10
|Name||2016 Conference on Lasers and Electro-Optics, CLEO 2016|
|Other||2016 Conference on Lasers and Electro-Optics, CLEO 2016|
|Period||16/6/5 → 16/6/10|
Bibliographical noteFunding Information:
The State Committee for Scientific Research, Poland, supported this work under contract KBN No. 3758/T02/2006/31.
© 2016 OSA.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering