Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors

Inyeal Lee; Servin Rathi; Dongsuk Lim; Lijun Li; Jinwoo Park; Yoontae Lee; Kyung Soo Yi; Krishna P. Dhakal; Jeongyong Kim; Changgu Lee; Gwan Hyoung Lee; Young Duck Kim; James Hone; Sun Jin Yun; Doo Hyeb Youn; Gil Ho Kim

doi:10.1002/adma.201601949

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂/MoS₂Heterostructure for Ambipolar Field-Effect Transistors

Inyeal Lee, Servin Rathi, Dongsuk Lim, Lijun Li, Jinwoo Park, Yoontae Lee, Kyung Soo Yi, Krishna P. Dhakal, Jeongyong Kim, Changgu Lee, Gwan Hyoung Lee, Young Duck Kim, James Hone, Sun Jin Yun, Doo Hyeb Youn, Gil Ho Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Original language	English
Pages (from-to)	9519-9525
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	43
DOIs	https://doi.org/10.1002/adma.201601949
Publication status	Published - 2016 Nov

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Nos. 2013R1A2A2A01069023 and 2015H1D3A1062519). This work was partly supported by Institute for Information and Communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (B0117-16-1003, Fundamental technologies of 2D materials and devices for the platform of new-functional smart devices).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Lee, I., Rathi, S., Lim, D., Li, L., Park, J., Lee, Y., Yi, K. S., Dhakal, K. P., Kim, J., Lee, C., Lee, G. H., Kim, Y. D., Hone, J., Yun, S. J., Youn, D. H., & Kim, G. H. (2016). Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂/MoS₂Heterostructure for Ambipolar Field-Effect Transistors. Advanced Materials, 28(43), 9519-9525. https://doi.org/10.1002/adma.201601949

Lee, Inyeal ; Rathi, Servin ; Lim, Dongsuk ; Li, Lijun ; Park, Jinwoo ; Lee, Yoontae ; Yi, Kyung Soo ; Dhakal, Krishna P. ; Kim, Jeongyong ; Lee, Changgu ; Lee, Gwan Hyoung ; Kim, Young Duck ; Hone, James ; Yun, Sun Jin ; Youn, Doo Hyeb ; Kim, Gil Ho. / Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂/MoS₂Heterostructure for Ambipolar Field-Effect Transistors. In: Advanced Materials. 2016 ; Vol. 28, No. 43. pp. 9519-9525.

@article{09116fbe6d734c02932539677c5e3638,

title = "Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors",

author = "Inyeal Lee and Servin Rathi and Dongsuk Lim and Lijun Li and Jinwoo Park and Yoontae Lee and Yi, {Kyung Soo} and Dhakal, {Krishna P.} and Jeongyong Kim and Changgu Lee and Lee, {Gwan Hyoung} and Kim, {Young Duck} and James Hone and Yun, {Sun Jin} and Youn, {Doo Hyeb} and Kim, {Gil Ho}",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Nos. 2013R1A2A2A01069023 and 2015H1D3A1062519). This work was partly supported by Institute for Information and Communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (B0117-16-1003, Fundamental technologies of 2D materials and devices for the platform of new-functional smart devices).",

year = "2016",

month = nov,

doi = "10.1002/adma.201601949",

language = "English",

volume = "28",

pages = "9519--9525",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

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Lee, I, Rathi, S, Lim, D, Li, L, Park, J, Lee, Y, Yi, KS, Dhakal, KP, Kim, J, Lee, C, Lee, GH, Kim, YD, Hone, J, Yun, SJ, Youn, DH & Kim, GH 2016, 'Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂/MoS₂Heterostructure for Ambipolar Field-Effect Transistors', Advanced Materials, vol. 28, no. 43, pp. 9519-9525. https://doi.org/10.1002/adma.201601949

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂/MoS₂Heterostructure for Ambipolar Field-Effect Transistors. / Lee, Inyeal; Rathi, Servin; Lim, Dongsuk; Li, Lijun; Park, Jinwoo; Lee, Yoontae; Yi, Kyung Soo; Dhakal, Krishna P.; Kim, Jeongyong; Lee, Changgu; Lee, Gwan Hyoung; Kim, Young Duck; Hone, James; Yun, Sun Jin; Youn, Doo Hyeb; Kim, Gil Ho.

In: Advanced Materials, Vol. 28, No. 43, 11.2016, p. 9519-9525.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors

AU - Lee, Inyeal

AU - Rathi, Servin

AU - Lim, Dongsuk

AU - Li, Lijun

AU - Park, Jinwoo

AU - Lee, Yoontae

AU - Yi, Kyung Soo

AU - Dhakal, Krishna P.

AU - Kim, Jeongyong

AU - Lee, Changgu

AU - Lee, Gwan Hyoung

AU - Kim, Young Duck

AU - Hone, James

AU - Yun, Sun Jin

AU - Youn, Doo Hyeb

AU - Kim, Gil Ho

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Nos. 2013R1A2A2A01069023 and 2015H1D3A1062519). This work was partly supported by Institute for Information and Communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (B0117-16-1003, Fundamental technologies of 2D materials and devices for the platform of new-functional smart devices).

PY - 2016/11

Y1 - 2016/11

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DO - 10.1002/adma.201601949

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JO - Advanced Materials

JF - Advanced Materials

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