Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors

Inyeal Lee, Servin Rathi, Dongsuk Lim, Lijun Li, Jinwoo Park, Yoontae Lee, Kyung Soo Yi, Krishna P. Dhakal, Jeongyong Kim, Changgu Lee, Gwan Hyoung Lee, Young Duck Kim, James Hone, Sun Jin Yun, Doo Hyeb Youn, Gil Ho Kim

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Abstract

A new method that enables a dual-channel field-effect-transistor (FET) based on a vertically stacked heterostructure of ultrathin n-type MoS2 and p-type WSe2 layers for the study of parallel carrier transport was demonstrated. First, a MoS2 layer was mechanically exfoliated on a SiO2/Si substrate by the Scotch tape method. The electrodes were patterned by photolithography, followed by e-beam evaporation of Ti/Pt (15/10 nm). An exfoliated WSe2 layer was transferred onto the device region by the poly(methyl methacrylate) (PMMA)-transfer method, resulting in the formation of a WSe2/MoS2 heterostructure and the contact of WSe2 with the Pt electrode. To investigate the optical properties of the WSe2/MoS2 heterostructure, Raman spectroscopy was employed using a laser with a wavelength of 532 nm. To study the optoelectronic interactions in the heterostructure, photoluminescence (PL) measurements were performed using a laser with a wavelength of 514 nm. Before measurement of the dual-channel WSe2/MoS2 FETs, the single-channel FETs of MoS2 and WSe2 were separately measured to confirm the doping polarity in each channel material. The transfer characteristics of the single-channel MoS2 (WSe2) FET with Ti (Pt) electrodes showed n-type (p-type) unipolar transport. The vertically stacked p- and n-channel heterostructure reduces device fabrication complexities, specifically for ambipolar CMOS invertors. The dual-channel FET demonstrates novel optoelectrical applications of TMDs in stacked 2D materials to achieve highly dense electronics.

Original languageEnglish
Pages (from-to)9519-9525
Number of pages7
JournalAdvanced Materials
Volume28
Issue number43
DOIs
Publication statusPublished - 2016 Jan 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, I., Rathi, S., Lim, D., Li, L., Park, J., Lee, Y., Yi, K. S., Dhakal, K. P., Kim, J., Lee, C., Lee, G. H., Kim, Y. D., Hone, J., Yun, S. J., Youn, D. H., & Kim, G. H. (2016). Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors. Advanced Materials, 28(43), 9519-9525. https://doi.org/10.1002/adma.201601949