Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors

Inyeal Lee, Servin Rathi, Dongsuk Lim, Lijun Li, Jinwoo Park, Yoontae Lee, Kyung Soo Yi, Krishna P. Dhakal, Jeongyong Kim, Changgu Lee, Gwan Hyoung Lee, Young Duck Kim, James Hone, Sun Jin Yun, Doo Hyeb Youn, Gil Ho Kim

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)
Original languageEnglish
Pages (from-to)9519-9525
Number of pages7
JournalAdvanced Materials
Volume28
Issue number43
DOIs
Publication statusPublished - 2016 Nov

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Nos. 2013R1A2A2A01069023 and 2015H1D3A1062519). This work was partly supported by Institute for Information and Communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (B0117-16-1003, Fundamental technologies of 2D materials and devices for the platform of new-functional smart devices).

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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