Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device

Youn Ho Park, Sang Hoon Shin, Jin Dong Song, Joonyeon Chang, Suk Hee Han, Heon Jin Choi, Hyun Cheol Koo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 × 10-11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.

Original languageEnglish
Pages (from-to)34-37
Number of pages4
JournalSolid-State Electronics
Volume82
DOIs
Publication statusPublished - 2013 Mar 12

Fingerprint

Voltage control
Semiconductor quantum wells
quantum wells
Logic devices
Electric potential
electric potential
Controllability
Transistors
Orbits
controllability
spin-orbit interactions
logic
margins
transistors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Park, Youn Ho ; Shin, Sang Hoon ; Song, Jin Dong ; Chang, Joonyeon ; Han, Suk Hee ; Choi, Heon Jin ; Koo, Hyun Cheol. / Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device. In: Solid-State Electronics. 2013 ; Vol. 82. pp. 34-37.
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Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device. / Park, Youn Ho; Shin, Sang Hoon; Song, Jin Dong; Chang, Joonyeon; Han, Suk Hee; Choi, Heon Jin; Koo, Hyun Cheol.

In: Solid-State Electronics, Vol. 82, 12.03.2013, p. 34-37.

Research output: Contribution to journalArticle

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AU - Choi, Heon Jin

AU - Koo, Hyun Cheol

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