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Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO
2
high-k metal gate stacks
Jungwoo Oh
School of Integrated Technology
Research output
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Contribution to journal
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Article
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peer-review
1
Citation (Scopus)
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Dive into the research topics of 'Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO
2
high-k metal gate stacks'. Together they form a unique fingerprint.
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Chemistry
Field Effect
65%
Interface Trap
54%
Metal Oxide
54%
Point Group C∞V
52%
Compound Mobility
50%
Semiconductor
50%
Trap Density Measurement
50%
Leakage Current
43%
Potential Barrier
43%
Hysteresis
32%
Metal
29%
Dielectric Material
29%
Band Gap
24%
Liquid Film
15%
Energy
15%
Engineering & Materials Science
Epitaxial films
100%
Gate dielectrics
93%
MOSFET devices
76%
Energy gap
74%
Leakage currents
70%
Hysteresis
62%
Substrates
46%
Metals
42%
Physics & Astronomy
caps
69%
metal oxide semiconductors
67%
field effect transistors
51%
metals
33%
augmentation
13%
leakage
9%
hysteresis
8%
traps
8%
causes
6%