Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO₂ high-k metal gate stacks

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Stack 50%
• Enhancement 25%
• Gate Dielectric 25%
• Metal Gate 25%
• Interface Trap 25%
• Hysteresis 25%
• Band Gap Energy 25%
• Mobility Enhancement 25%
• Control Gate 25%
• Substrates 25%
• Density 25%
• High Quality 25%
• Low Potential 25%

Material Science

• Liquid Films 25%