GE on SI photodiodes for SI cmos monolithic optical receivers

Zhihong Huang, Jungwoo Oh, Joe C. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


We report a Ge growth technique on Si using thin SiGe buffer layers and also discuss photodiodes fabricated on the Ge for Si CMOS monolithic optical receiver applications. The effectiveness of thin SiGe buffer layers in terminating threading dislocations and reducing photodiode dark current for Ge epitaxially grown on Si (001) has been investigated for Ge photodiodes. The dark current of Ge on Si photodiodes can be reduced by over an order of magnitude by incorporating two different composition SiGe buffer layers. A backside-illuminated photodetector has been fabricated with the dark current as low as 3.6 mA/cm2 at 1 V reverse bias. To improve the speed of the photodiode, a device with thinner SiGe buffer layers was demonstrated and achieved 21.5 GHz bandwidth at 1.31 μm, resulting in a record high efficiency-bandwidth product of 12.9 GHz. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationECS Transactions - Integrated Optoelectronics 3
PublisherElectrochemical Society Inc.
Number of pages10
ISBN (Print)9781604239157
Publication statusPublished - 2006
EventIntegrated Optoelectronics 3 - 210th ECS Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


OtherIntegrated Optoelectronics 3 - 210th ECS Meeting

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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