Ge oxidation in the remaining cores of Si 1-xGe x nanowires after prolonged oxidation

Sang Yeon Kim, Sun Wook Kim, Dae Hong Ko, Hoo Jeong Lee

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Abstract

For this investigation of the Ge behavior of condensed Si 1-yGe y (y > x) cores during the oxidation of Si 1-xGe x nanowires, Si 1-xGe x nanowires were grown in a tube furnace by the vapor-liquid-solid method and thermally oxidized. The test results were characterized using several techniques of transmission electron microscopy. The two types of Ge condensation are related to the diameter and Ge content of the nanowires. The consumption of Si atoms in prolonged oxidation caused the condensed SiGe cores to become Ge-only cores; and the continuous oxidation resulted in the oxidation of the Ge cores. The oxidation of Ge atoms was confirmed by scanning transmission electron microscopy.

Original languageEnglish
Pages (from-to)3650-3654
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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