Ge oxidation in the remaining cores of Si 1-xGe x nanowires after prolonged oxidation

Sang Yeon Kim, Sun Wook Kim, Dae Hong Ko, Hoo Jeong Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

For this investigation of the Ge behavior of condensed Si 1-yGe y (y > x) cores during the oxidation of Si 1-xGe x nanowires, Si 1-xGe x nanowires were grown in a tube furnace by the vapor-liquid-solid method and thermally oxidized. The test results were characterized using several techniques of transmission electron microscopy. The two types of Ge condensation are related to the diameter and Ge content of the nanowires. The consumption of Si atoms in prolonged oxidation caused the condensed SiGe cores to become Ge-only cores; and the continuous oxidation resulted in the oxidation of the Ge cores. The oxidation of Ge atoms was confirmed by scanning transmission electron microscopy.

Original languageEnglish
Pages (from-to)3650-3654
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

Fingerprint

Nanowires
nanowires
Oxidation
oxidation
Scanning Transmission Electron Microscopy
Transmission Electron Microscopy
Transmission electron microscopy
Atoms
transmission electron microscopy
furnaces
atoms
Condensation
Furnaces
condensation
Vapors
vapors
tubes
Scanning electron microscopy
scanning electron microscopy
Liquids

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kim, Sang Yeon ; Kim, Sun Wook ; Ko, Dae Hong ; Lee, Hoo Jeong. / Ge oxidation in the remaining cores of Si 1-xGe x nanowires after prolonged oxidation. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 4. pp. 3650-3654.
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Ge oxidation in the remaining cores of Si 1-xGe x nanowires after prolonged oxidation. / Kim, Sang Yeon; Kim, Sun Wook; Ko, Dae Hong; Lee, Hoo Jeong.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 06.07.2012, p. 3650-3654.

Research output: Contribution to journalArticle

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