Ge surface segregation during Si1-xGex(0 1 1) gas-source molecular beam epitaxy from Si2H6 and Ge2H6

N. Taylor, Hyungjun Kim, J. E. Greene

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ge surface segregation during Si1-xGex gas-source molecular beam epitaxy on Si(0 1 1) was investigated using in situ D2 temperature programmed desorption (TPD). The Si1-xGex(0 1 1) layers, x = 0-0.20, were grown from Si2H6/Ge2H6 mixtures at temperatures Ts ranging from 475 °C to 750 °C. Immediately following film growth, the samples were quenched and exposed to atomic D at 250 °C until saturation coverage. TPD spectra from Si1-xGex(0 1 1) consist of five second-order peaks due to D2 desorption from, in order of decreasing temperature, Si rest-atom and adatom monodeuterides, Si dideuteride, and Ge rest-atom and adatom monodeuteride phases. Temperature-dependent Ge surface coverages θGe, determined from the TPD results, increase sharply with x ranging, at Ts = 550 °C, from 0.27 ML with x = 0.04 to 0.74 ML for layers with x = 0.20. For a given film composition, θGe decreases with decreasing Ts due to the corresponding increase in the fraction fSi,H of Si surface atoms terminated with H. From these data, we find that the Ge segregation enthalpy ΔHs for Si1-xGex(0 1 1) varies from -0.18 eV at Ts = 750 °C (fSi,H<0.003) to -0.09 eV at Ts = 475 °C (fSi,H = 0.22).

Original languageEnglish
Pages (from-to)171-180
Number of pages10
JournalSurface Science
Volume475
Issue number1-3
DOIs
Publication statusPublished - 2001 Mar 10

Fingerprint

Gas source molecular beam epitaxy
Surface segregation
Temperature programmed desorption
molecular beam epitaxy
Adatoms
Atoms
desorption
gases
Film growth
Temperature
adatoms
temperature
Enthalpy
Desorption
atoms
Chemical analysis
enthalpy
saturation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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title = "Ge surface segregation during Si1-xGex(0 1 1) gas-source molecular beam epitaxy from Si2H6 and Ge2H6",
abstract = "Ge surface segregation during Si1-xGex gas-source molecular beam epitaxy on Si(0 1 1) was investigated using in situ D2 temperature programmed desorption (TPD). The Si1-xGex(0 1 1) layers, x = 0-0.20, were grown from Si2H6/Ge2H6 mixtures at temperatures Ts ranging from 475 °C to 750 °C. Immediately following film growth, the samples were quenched and exposed to atomic D at 250 °C until saturation coverage. TPD spectra from Si1-xGex(0 1 1) consist of five second-order peaks due to D2 desorption from, in order of decreasing temperature, Si rest-atom and adatom monodeuterides, Si dideuteride, and Ge rest-atom and adatom monodeuteride phases. Temperature-dependent Ge surface coverages θGe, determined from the TPD results, increase sharply with x ranging, at Ts = 550 °C, from 0.27 ML with x = 0.04 to 0.74 ML for layers with x = 0.20. For a given film composition, θGe decreases with decreasing Ts due to the corresponding increase in the fraction fSi,H of Si surface atoms terminated with H. From these data, we find that the Ge segregation enthalpy ΔHs for Si1-xGex(0 1 1) varies from -0.18 eV at Ts = 750 °C (fSi,H<0.003) to -0.09 eV at Ts = 475 °C (fSi,H = 0.22).",
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Ge surface segregation during Si1-xGex(0 1 1) gas-source molecular beam epitaxy from Si2H6 and Ge2H6. / Taylor, N.; Kim, Hyungjun; Greene, J. E.

In: Surface Science, Vol. 475, No. 1-3, 10.03.2001, p. 171-180.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ge surface segregation during Si1-xGex(0 1 1) gas-source molecular beam epitaxy from Si2H6 and Ge2H6

AU - Taylor, N.

AU - Kim, Hyungjun

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N2 - Ge surface segregation during Si1-xGex gas-source molecular beam epitaxy on Si(0 1 1) was investigated using in situ D2 temperature programmed desorption (TPD). The Si1-xGex(0 1 1) layers, x = 0-0.20, were grown from Si2H6/Ge2H6 mixtures at temperatures Ts ranging from 475 °C to 750 °C. Immediately following film growth, the samples were quenched and exposed to atomic D at 250 °C until saturation coverage. TPD spectra from Si1-xGex(0 1 1) consist of five second-order peaks due to D2 desorption from, in order of decreasing temperature, Si rest-atom and adatom monodeuterides, Si dideuteride, and Ge rest-atom and adatom monodeuteride phases. Temperature-dependent Ge surface coverages θGe, determined from the TPD results, increase sharply with x ranging, at Ts = 550 °C, from 0.27 ML with x = 0.04 to 0.74 ML for layers with x = 0.20. For a given film composition, θGe decreases with decreasing Ts due to the corresponding increase in the fraction fSi,H of Si surface atoms terminated with H. From these data, we find that the Ge segregation enthalpy ΔHs for Si1-xGex(0 1 1) varies from -0.18 eV at Ts = 750 °C (fSi,H<0.003) to -0.09 eV at Ts = 475 °C (fSi,H = 0.22).

AB - Ge surface segregation during Si1-xGex gas-source molecular beam epitaxy on Si(0 1 1) was investigated using in situ D2 temperature programmed desorption (TPD). The Si1-xGex(0 1 1) layers, x = 0-0.20, were grown from Si2H6/Ge2H6 mixtures at temperatures Ts ranging from 475 °C to 750 °C. Immediately following film growth, the samples were quenched and exposed to atomic D at 250 °C until saturation coverage. TPD spectra from Si1-xGex(0 1 1) consist of five second-order peaks due to D2 desorption from, in order of decreasing temperature, Si rest-atom and adatom monodeuterides, Si dideuteride, and Ge rest-atom and adatom monodeuteride phases. Temperature-dependent Ge surface coverages θGe, determined from the TPD results, increase sharply with x ranging, at Ts = 550 °C, from 0.27 ML with x = 0.04 to 0.74 ML for layers with x = 0.20. For a given film composition, θGe decreases with decreasing Ts due to the corresponding increase in the fraction fSi,H of Si surface atoms terminated with H. From these data, we find that the Ge segregation enthalpy ΔHs for Si1-xGex(0 1 1) varies from -0.18 eV at Ts = 750 °C (fSi,H<0.003) to -0.09 eV at Ts = 475 °C (fSi,H = 0.22).

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