General route of nanowire field effect transistor

Tae Il Lee, Won Jin Choi, Kyung Ju Moon, Joohee Jeon, Hong Koo Baik, Jae Min Myoung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An increasing number of technologies require large-scale integration of separately fabricated nano-objects into spatially organized, functional systems. Here we introduce an approach for dielectrophoresis and reverse transfer printing method. By doing these method we can easily get a nanowire bottom gate transistor with high performance. Firstly, nanowire bridge was formed simply by dielectrophoresis and then by reverse transferring of this bridge on the gate dielectric layer, a nanowire field effect transistor was fabricated. The on/off ratio, threshold voltage, field effect hole mobility, hole concentration and threshold swing of the transistor were measured by ∼6.6 × 10 6, -7.2V, 9.9cm2V·s and ∼1.453 × 10 16/cm-3, and 0.504V/decade.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1146-1148
Number of pages3
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Lee, T. I., Choi, W. J., Moon, K. J., Jeon, J., Baik, H. K., & Myoung, J. M. (2010). General route of nanowire field effect transistor. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1146-1148). [5424980] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424980