Wafer-direct-bonding method was used to find gettering phenomenon of oxidation-induced stacking faults in silicon-on-insulator (SOI) structure. Silicon wafers were thermally oxidized to fabricate the buried oxide in the wet oxygen ambient at 1100 °C. Active and handle wafers were immersed in a solution to make hydrophilic surfaces. Buried oxide layer was removed by hydrofluoric acid to observe the stacking faults at the Si/SiO2 interface of SOI structure. Optical microscope was used to observe etched pits of oxidation-induced stacking faults on the (100) Si surface. Pattern of gettered oxidation-induced stacking faults was found to be not effected by annealing time below the 800 °C annealing temperature.
Bibliographical noteFunding Information:
This work was supported by the Brain Korea 21 Project.
All Science Journal Classification (ASJC) codes
- Materials Science(all)