Gettering phenomenon of oxidation-induced stacking-faults in silicon-on-insulator structure by wafer-direct-bonding method

K. T. Kim, D. J. Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Wafer-direct-bonding method was used to find gettering phenomenon of oxidation-induced stacking faults in silicon-on-insulator (SOI) structure. Silicon wafers were thermally oxidized to fabricate the buried oxide in the wet oxygen ambient at 1100 °C. Active and handle wafers were immersed in a solution to make hydrophilic surfaces. Buried oxide layer was removed by hydrofluoric acid to observe the stacking faults at the Si/SiO2 interface of SOI structure. Optical microscope was used to observe etched pits of oxidation-induced stacking faults on the (100) Si surface. Pattern of gettered oxidation-induced stacking faults was found to be not effected by annealing time below the 800 °C annealing temperature.

Original languageEnglish
Pages (from-to)245-247
Number of pages3
JournalJournal of Materials Science Letters
Volume20
Issue number3
DOIs
Publication statusPublished - 2001 Feb 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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