Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films

G. C. Xiong, Q. Li, H. L. Ju, S. M. Bhagat, S. E. Lofland, R. L. Greene, T. Venkatesan

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original "zero" field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995 Dec 1

Fingerprint

conductivity
electrical resistivity
magnetic fields
histories
magnetization
thin films
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Xiong, G. C., Li, Q., Ju, H. L., Bhagat, S. M., Lofland, S. E., Greene, R. L., & Venkatesan, T. (1995). Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films. Applied Physics Letters, 67. https://doi.org/10.1063/1.115444
Xiong, G. C. ; Li, Q. ; Ju, H. L. ; Bhagat, S. M. ; Lofland, S. E. ; Greene, R. L. ; Venkatesan, T. / Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films. In: Applied Physics Letters. 1995 ; Vol. 67.
@article{a79ac406dd8c42738aea33af8503add9,
title = "Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films",
abstract = "A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original {"}zero{"} field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.",
author = "Xiong, {G. C.} and Q. Li and Ju, {H. L.} and Bhagat, {S. M.} and Lofland, {S. E.} and Greene, {R. L.} and T. Venkatesan",
year = "1995",
month = "12",
day = "1",
doi = "10.1063/1.115444",
language = "English",
volume = "67",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

Xiong, GC, Li, Q, Ju, HL, Bhagat, SM, Lofland, SE, Greene, RL & Venkatesan, T 1995, 'Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films', Applied Physics Letters, vol. 67. https://doi.org/10.1063/1.115444

Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films. / Xiong, G. C.; Li, Q.; Ju, H. L.; Bhagat, S. M.; Lofland, S. E.; Greene, R. L.; Venkatesan, T.

In: Applied Physics Letters, Vol. 67, 01.12.1995.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films

AU - Xiong, G. C.

AU - Li, Q.

AU - Ju, H. L.

AU - Bhagat, S. M.

AU - Lofland, S. E.

AU - Greene, R. L.

AU - Venkatesan, T.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original "zero" field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.

AB - A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original "zero" field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.

UR - http://www.scopus.com/inward/record.url?scp=30244523012&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30244523012&partnerID=8YFLogxK

U2 - 10.1063/1.115444

DO - 10.1063/1.115444

M3 - Article

AN - SCOPUS:30244523012

VL - 67

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -