Glucose-based resistive random access memory for transient electronics

Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)


In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 seconds) characteristics, without significant degradation, demonstrating its stable data storage capability and reliability. To investigate the switching mechanism of the glucose-based RRAM, various organic materials were prepared for the switching layer of RRAM. In addition, the dissolution characteristic of the glucose-based RRAM was evaluated to investigate the feasibility of its utilization for transient electronics, using a water-soluble substrate: a sodium carboxymethyl cellulose film. With this approach, a biocompatible glucose-based RRAM was successfully fabricated for future transient electronics.

Original languageEnglish
JournalJournal of Information Display
Publication statusAccepted/In press - 2019 Jan 1


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering

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