Grain growth kinetics and microstructures of the high TcGdBa2Cu3O7-δ superconductor

M. W. Shin, T. M. Hare, A. I. Kingon

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Abstract

Grain growth in the GdBa2Cu307-g high Tcsuperconductor was investigated. The composition Gd1.09Ba1.91Cu307-8 within the solid solubility region, was selected for the present grain growth study. Differential thermal analysis did not reveal any thermal event except the incongruent melting point, which is indicative of the absence of a liquid second phase during grain growth. The final densities of isothermally annealed samples ranged from 91.3% to 93.7% of theoretical density. The microstructure observation showed a greater grain aspect ratio in this material than in YBa2Cu307-δ. The average grain aspect ratio was about 4.7. A very low grain growth exponent of 0.07 was found in the isothermal annealing temperature range from 965 °C to 1020 °C. By comparison with the results on the YBa2Cu307-δ system previously reported, it was concluded that the grain growth kinetics in these materials are strongly controlled by the anisotropy of the grain boundary energy. The activation energy of grain growth was calculated to be about 77 kJ/mole.

Original languageEnglish
Pages (from-to)3194-3201
Number of pages8
JournalJournal of Materials Research
Volume7
Issue number12
DOIs
Publication statusPublished - 1992 Dec

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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