Grains in Selectively Grown MoS2 Thin Films

Hyung Jun Kim, Hojoong Kim, Suk Yang, Jang Yeon Kwon

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Transition metal dichalcogenides (TMDCs) have recently been studied using various synthesis methods, such as chemical vapor deposition for large-scale production. Despite the realization of large-scale production with high material quality, a range of approaches have been made to solve the patterning issue of TMDCs focusing on the application of integrated devices; however, patterning is still under study to accurately represent nanoscale-sized patterns, as well as the desired positions and shapes. Here, an insulating substrate is treated selectively with O2 plasma, and MoS2 growth is induced in the superhydrophilic area. Selectively well-grown MoS2 patterns are confirmed by atomic force microscopy and Raman and photoluminescence spectroscopy. In addition, the grain size, according to the growth size, and grain boundary are analyzed by annual dark field transmission electron microscopy (TEM) and spherical aberration-corrected scanning TEM to confirm the selective growth. An analysis of the device performance and the optical properties reveals an enhancement with increasing grain size. This method presents the path of the growth technique for patterning, as well as the direction that can be applied to devices and integrated circuits.

Original languageEnglish
Article number1702256
JournalSmall
Volume13
Issue number46
DOIs
Publication statusPublished - 2017 Dec 13

Fingerprint

Thin films
Growth
Transition metals
Metals
Transmission electron microscopy
Equipment and Supplies
Optical Devices
Scanning Transmission Electron Microscopy
Photoluminescence spectroscopy
Raman Spectrum Analysis
Atomic Force Microscopy
Aberrations
Transmission Electron Microscopy
Integrated circuits
Raman spectroscopy
Chemical vapor deposition
Atomic force microscopy
Grain boundaries
Optical properties
Plasmas

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Engineering (miscellaneous)

Cite this

Kim, Hyung Jun ; Kim, Hojoong ; Yang, Suk ; Kwon, Jang Yeon. / Grains in Selectively Grown MoS2 Thin Films. In: Small. 2017 ; Vol. 13, No. 46.
@article{834bc3ef4b3545f1a0b240652f5e6188,
title = "Grains in Selectively Grown MoS2 Thin Films",
abstract = "Transition metal dichalcogenides (TMDCs) have recently been studied using various synthesis methods, such as chemical vapor deposition for large-scale production. Despite the realization of large-scale production with high material quality, a range of approaches have been made to solve the patterning issue of TMDCs focusing on the application of integrated devices; however, patterning is still under study to accurately represent nanoscale-sized patterns, as well as the desired positions and shapes. Here, an insulating substrate is treated selectively with O2 plasma, and MoS2 growth is induced in the superhydrophilic area. Selectively well-grown MoS2 patterns are confirmed by atomic force microscopy and Raman and photoluminescence spectroscopy. In addition, the grain size, according to the growth size, and grain boundary are analyzed by annual dark field transmission electron microscopy (TEM) and spherical aberration-corrected scanning TEM to confirm the selective growth. An analysis of the device performance and the optical properties reveals an enhancement with increasing grain size. This method presents the path of the growth technique for patterning, as well as the direction that can be applied to devices and integrated circuits.",
author = "Kim, {Hyung Jun} and Hojoong Kim and Suk Yang and Kwon, {Jang Yeon}",
year = "2017",
month = "12",
day = "13",
doi = "10.1002/smll.201702256",
language = "English",
volume = "13",
journal = "Small",
issn = "1613-6810",
publisher = "Wiley-VCH Verlag",
number = "46",

}

Grains in Selectively Grown MoS2 Thin Films. / Kim, Hyung Jun; Kim, Hojoong; Yang, Suk; Kwon, Jang Yeon.

In: Small, Vol. 13, No. 46, 1702256, 13.12.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Grains in Selectively Grown MoS2 Thin Films

AU - Kim, Hyung Jun

AU - Kim, Hojoong

AU - Yang, Suk

AU - Kwon, Jang Yeon

PY - 2017/12/13

Y1 - 2017/12/13

N2 - Transition metal dichalcogenides (TMDCs) have recently been studied using various synthesis methods, such as chemical vapor deposition for large-scale production. Despite the realization of large-scale production with high material quality, a range of approaches have been made to solve the patterning issue of TMDCs focusing on the application of integrated devices; however, patterning is still under study to accurately represent nanoscale-sized patterns, as well as the desired positions and shapes. Here, an insulating substrate is treated selectively with O2 plasma, and MoS2 growth is induced in the superhydrophilic area. Selectively well-grown MoS2 patterns are confirmed by atomic force microscopy and Raman and photoluminescence spectroscopy. In addition, the grain size, according to the growth size, and grain boundary are analyzed by annual dark field transmission electron microscopy (TEM) and spherical aberration-corrected scanning TEM to confirm the selective growth. An analysis of the device performance and the optical properties reveals an enhancement with increasing grain size. This method presents the path of the growth technique for patterning, as well as the direction that can be applied to devices and integrated circuits.

AB - Transition metal dichalcogenides (TMDCs) have recently been studied using various synthesis methods, such as chemical vapor deposition for large-scale production. Despite the realization of large-scale production with high material quality, a range of approaches have been made to solve the patterning issue of TMDCs focusing on the application of integrated devices; however, patterning is still under study to accurately represent nanoscale-sized patterns, as well as the desired positions and shapes. Here, an insulating substrate is treated selectively with O2 plasma, and MoS2 growth is induced in the superhydrophilic area. Selectively well-grown MoS2 patterns are confirmed by atomic force microscopy and Raman and photoluminescence spectroscopy. In addition, the grain size, according to the growth size, and grain boundary are analyzed by annual dark field transmission electron microscopy (TEM) and spherical aberration-corrected scanning TEM to confirm the selective growth. An analysis of the device performance and the optical properties reveals an enhancement with increasing grain size. This method presents the path of the growth technique for patterning, as well as the direction that can be applied to devices and integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=85037526536&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85037526536&partnerID=8YFLogxK

U2 - 10.1002/smll.201702256

DO - 10.1002/smll.201702256

M3 - Article

C2 - 29057624

AN - SCOPUS:85037526536

VL - 13

JO - Small

JF - Small

SN - 1613-6810

IS - 46

M1 - 1702256

ER -