Graphene based heterostructures

C. Dean, A. F. Young, L. Wang, I. Meric, G. H. Lee, K. Watanabe, T. Taniguchi, K. Shepard, P. Kim, J. Hone

Research output: Contribution to journalArticle

125 Citations (Scopus)

Abstract

The two dimensional charge carriers in monolayer and bilayer graphene are described by massless and massive chiral Dirac Hamiltonians, respectively. These two-dimensional materials are predicted to exhibit a wide range of behavior, etc. However, graphene devices on a typical three-dimensional insulating substrates such as SiO 2 are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. We have developed a novel technique for substrate engineering of graphene devices using layered dielectric materials to build graphene based vertical heterostructures. We employ hBN, an insulating isomorph of graphite, as a substrate and gate dielectric for graphene electronics. In this review, we describe the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal hBN substrates, using a mechanical transfer process. Graphene devices on hBN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO 2. We use the enhanced mobility of electrons in hBN supported graphene to investigate the effects of electronic interactions. We find that interactions drive spontaneous breaking of the emergent SU(4) symmetry of the graphene Landau levels, leading to a variety of non-trivial integer and fractional quantum Hall states. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.

Original languageEnglish
Pages (from-to)1275-1282
Number of pages8
JournalSolid State Communications
Volume152
Issue number15
DOIs
Publication statusPublished - 2012 Aug 1

Fingerprint

Graphite
Graphene
Heterojunctions
graphene
Substrates
Monolayers
Fabrication
Hamiltonians
Gate dielectrics
Charge carriers
Electronic equipment
Graphene devices
Single crystals
fabrication
Crystalline materials
Electrons
electronics
integers
charge carriers
inhomogeneity

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Dean, C., Young, A. F., Wang, L., Meric, I., Lee, G. H., Watanabe, K., ... Hone, J. (2012). Graphene based heterostructures. Solid State Communications, 152(15), 1275-1282. https://doi.org/10.1016/j.ssc.2012.04.021
Dean, C. ; Young, A. F. ; Wang, L. ; Meric, I. ; Lee, G. H. ; Watanabe, K. ; Taniguchi, T. ; Shepard, K. ; Kim, P. ; Hone, J. / Graphene based heterostructures. In: Solid State Communications. 2012 ; Vol. 152, No. 15. pp. 1275-1282.
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Dean, C, Young, AF, Wang, L, Meric, I, Lee, GH, Watanabe, K, Taniguchi, T, Shepard, K, Kim, P & Hone, J 2012, 'Graphene based heterostructures', Solid State Communications, vol. 152, no. 15, pp. 1275-1282. https://doi.org/10.1016/j.ssc.2012.04.021

Graphene based heterostructures. / Dean, C.; Young, A. F.; Wang, L.; Meric, I.; Lee, G. H.; Watanabe, K.; Taniguchi, T.; Shepard, K.; Kim, P.; Hone, J.

In: Solid State Communications, Vol. 152, No. 15, 01.08.2012, p. 1275-1282.

Research output: Contribution to journalArticle

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AU - Dean, C.

AU - Young, A. F.

AU - Wang, L.

AU - Meric, I.

AU - Lee, G. H.

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AU - Taniguchi, T.

AU - Shepard, K.

AU - Kim, P.

AU - Hone, J.

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Dean C, Young AF, Wang L, Meric I, Lee GH, Watanabe K et al. Graphene based heterostructures. Solid State Communications. 2012 Aug 1;152(15):1275-1282. https://doi.org/10.1016/j.ssc.2012.04.021