Graphene converted from the photoresist material on polycrystalline nickel substrate

Hyonik Lee, Seulah Lee, Juree Hong, Sang Geun Lee, Jae Hong Lee, Taeyoon Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Graphene has attracted attention from both academia and industry owing to its fascinating properties and a wide range of potential applications. Methods for graphene synthesis from solid and liquid carbon sources, including poly(methyl methacrylate) (PMMA), benzene, and other carbon sources, have been reported due to the potential use of a wide variety of carbon feedstocks. In this study, high quality graphene was grown from SU-8-2002 photoresist materials on Ni foil with annealing at 1000°C for 20 min in an ambient mixture of He and H 2 gas. Scanning electron microscopy image of the as-synthesized graphene on Ni foil indicated that graphene covered the whole area of the Ni foil with various numbers of layers due to the different carbon segregation rate depending on the underlying Ni grain orientation. To unambiguously distinguish the thickness variation of the synthesized graphene layers, they were transferred onto SiO 2 (300 nm)/Si substrate and were analyzed using optical microscopy, and Raman spectroscopy, which confirmed that the synthesized graphene is composed of various numbers of layers. The thickness dependent G/2D peak intensity ratio (I G=I 2D) of Raman spectra and their full width at half maximum values obtained from the transferred graphene layers were examined, which were in good accordance with atomic force microscopy analyses.

Original languageEnglish
Article number06FD17
JournalJapanese journal of applied physics
Volume51
Issue number6 PART 2
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

Photoresists
photoresists
Graphene
graphene
Nickel
nickel
Substrates
Metal foil
foils
Carbon
carbon
Full width at half maximum
Polymethyl methacrylates
polymethyl methacrylate
Feedstocks
Optical microscopy
Raman spectroscopy
Raman scattering
Atomic force microscopy
Benzene

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, Hyonik ; Lee, Seulah ; Hong, Juree ; Lee, Sang Geun ; Lee, Jae Hong ; Lee, Taeyoon. / Graphene converted from the photoresist material on polycrystalline nickel substrate. In: Japanese journal of applied physics. 2012 ; Vol. 51, No. 6 PART 2.
@article{200af26ff1fa47abb8e1172b1f44b301,
title = "Graphene converted from the photoresist material on polycrystalline nickel substrate",
abstract = "Graphene has attracted attention from both academia and industry owing to its fascinating properties and a wide range of potential applications. Methods for graphene synthesis from solid and liquid carbon sources, including poly(methyl methacrylate) (PMMA), benzene, and other carbon sources, have been reported due to the potential use of a wide variety of carbon feedstocks. In this study, high quality graphene was grown from SU-8-2002 photoresist materials on Ni foil with annealing at 1000°C for 20 min in an ambient mixture of He and H 2 gas. Scanning electron microscopy image of the as-synthesized graphene on Ni foil indicated that graphene covered the whole area of the Ni foil with various numbers of layers due to the different carbon segregation rate depending on the underlying Ni grain orientation. To unambiguously distinguish the thickness variation of the synthesized graphene layers, they were transferred onto SiO 2 (300 nm)/Si substrate and were analyzed using optical microscopy, and Raman spectroscopy, which confirmed that the synthesized graphene is composed of various numbers of layers. The thickness dependent G/2D peak intensity ratio (I G=I 2D) of Raman spectra and their full width at half maximum values obtained from the transferred graphene layers were examined, which were in good accordance with atomic force microscopy analyses.",
author = "Hyonik Lee and Seulah Lee and Juree Hong and Lee, {Sang Geun} and Lee, {Jae Hong} and Taeyoon Lee",
year = "2012",
month = "6",
day = "1",
doi = "10.1143/JJAP.51.06FD17",
language = "English",
volume = "51",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "6 PART 2",

}

Graphene converted from the photoresist material on polycrystalline nickel substrate. / Lee, Hyonik; Lee, Seulah; Hong, Juree; Lee, Sang Geun; Lee, Jae Hong; Lee, Taeyoon.

In: Japanese journal of applied physics, Vol. 51, No. 6 PART 2, 06FD17, 01.06.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Graphene converted from the photoresist material on polycrystalline nickel substrate

AU - Lee, Hyonik

AU - Lee, Seulah

AU - Hong, Juree

AU - Lee, Sang Geun

AU - Lee, Jae Hong

AU - Lee, Taeyoon

PY - 2012/6/1

Y1 - 2012/6/1

N2 - Graphene has attracted attention from both academia and industry owing to its fascinating properties and a wide range of potential applications. Methods for graphene synthesis from solid and liquid carbon sources, including poly(methyl methacrylate) (PMMA), benzene, and other carbon sources, have been reported due to the potential use of a wide variety of carbon feedstocks. In this study, high quality graphene was grown from SU-8-2002 photoresist materials on Ni foil with annealing at 1000°C for 20 min in an ambient mixture of He and H 2 gas. Scanning electron microscopy image of the as-synthesized graphene on Ni foil indicated that graphene covered the whole area of the Ni foil with various numbers of layers due to the different carbon segregation rate depending on the underlying Ni grain orientation. To unambiguously distinguish the thickness variation of the synthesized graphene layers, they were transferred onto SiO 2 (300 nm)/Si substrate and were analyzed using optical microscopy, and Raman spectroscopy, which confirmed that the synthesized graphene is composed of various numbers of layers. The thickness dependent G/2D peak intensity ratio (I G=I 2D) of Raman spectra and their full width at half maximum values obtained from the transferred graphene layers were examined, which were in good accordance with atomic force microscopy analyses.

AB - Graphene has attracted attention from both academia and industry owing to its fascinating properties and a wide range of potential applications. Methods for graphene synthesis from solid and liquid carbon sources, including poly(methyl methacrylate) (PMMA), benzene, and other carbon sources, have been reported due to the potential use of a wide variety of carbon feedstocks. In this study, high quality graphene was grown from SU-8-2002 photoresist materials on Ni foil with annealing at 1000°C for 20 min in an ambient mixture of He and H 2 gas. Scanning electron microscopy image of the as-synthesized graphene on Ni foil indicated that graphene covered the whole area of the Ni foil with various numbers of layers due to the different carbon segregation rate depending on the underlying Ni grain orientation. To unambiguously distinguish the thickness variation of the synthesized graphene layers, they were transferred onto SiO 2 (300 nm)/Si substrate and were analyzed using optical microscopy, and Raman spectroscopy, which confirmed that the synthesized graphene is composed of various numbers of layers. The thickness dependent G/2D peak intensity ratio (I G=I 2D) of Raman spectra and their full width at half maximum values obtained from the transferred graphene layers were examined, which were in good accordance with atomic force microscopy analyses.

UR - http://www.scopus.com/inward/record.url?scp=84863309540&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863309540&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.06FD17

DO - 10.1143/JJAP.51.06FD17

M3 - Article

AN - SCOPUS:84863309540

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 6 PART 2

M1 - 06FD17

ER -