A transparent flexible graphene nano-floating gate transistor memory (NFGTM) device was developed by combining a single-layer graphene active channel with gold nanoparticle (AuNP) charge trap elements. We systematically controlled the sizes of the AuNPs, the thickness of the tunneling dielectric layer, and the graphene doping level. In particular, we propose that the conductance difference (i.e., memory window) between the programming and erasing operations at a specific read gate voltage can be maximized through the doping. The resulting graphene NFGTMs developed here exhibited excellent programmable memory performances compared to previously reported graphene memory devices and displayed a large memory window (12 V), fast switching speed (1 μs), robust electrical reliability (105 s), and good mechanical (500 cycles) and thermal stability (100 °C). This journal is
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All Science Journal Classification (ASJC) codes
- Materials Science(all)