We report a novel ultraviolet photodetector based on graphene/hBN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW-1), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2∼20AW-1). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.
|Number of pages||8|
|Publication status||Published - 2015 Jul 27|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics