Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector

Zhiqian Wu; Xiaoqiang Li; Huikai Zhong; Shengjiao Zhang; Peng Wang; Tae Ho Kim; Sung Soo Kwak; Cheng Liu; Hongsheng Chen; Sang Woo Kim; Shisheng Lin

doi:10.1364/OE.23.018864

Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector

Zhiqian Wu, Xiaoqiang Li, Huikai Zhong, Shengjiao Zhang, Peng Wang, Tae Ho Kim, Sung Soo Kwak, Cheng Liu, Hongsheng Chen, Sang Woo Kim, Shisheng Lin

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report a novel ultraviolet photodetector based on graphene/hBN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW-1), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2∼20AW-1). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.

Original language	English
Pages (from-to)	18864-18871
Number of pages	8
Journal	Optics Express
Volume	23
Issue number	15
DOIs	https://doi.org/10.1364/OE.23.018864
Publication status	Published - 2015 Jul 27

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OE.23.018864

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@article{511a4e3bc3334d049ed8d4df28ad8c8a,

title = "Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector",

abstract = "We report a novel ultraviolet photodetector based on graphene/hBN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW-1), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2∼20AW-1). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.",

author = "Zhiqian Wu and Xiaoqiang Li and Huikai Zhong and Shengjiao Zhang and Peng Wang and Kim, {Tae Ho} and Kwak, {Sung Soo} and Cheng Liu and Hongsheng Chen and Kim, {Sang Woo} and Shisheng Lin",

year = "2015",

month = jul,

day = "27",

doi = "10.1364/OE.23.018864",

language = "English",

volume = "23",

pages = "18864--18871",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "15",

}

TY - JOUR

T1 - Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector

AU - Wu, Zhiqian

AU - Li, Xiaoqiang

AU - Zhong, Huikai

AU - Zhang, Shengjiao

AU - Wang, Peng

AU - Kim, Tae Ho

AU - Kwak, Sung Soo

AU - Liu, Cheng

AU - Chen, Hongsheng

AU - Kim, Sang Woo

AU - Lin, Shisheng

PY - 2015/7/27

Y1 - 2015/7/27

N2 - We report a novel ultraviolet photodetector based on graphene/hBN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW-1), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2∼20AW-1). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.

AB - We report a novel ultraviolet photodetector based on graphene/hBN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW-1), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2∼20AW-1). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84954518346&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954518346&partnerID=8YFLogxK

U2 - 10.1364/OE.23.018864

DO - 10.1364/OE.23.018864

M3 - Article

AN - SCOPUS:84954518346

SN - 1094-4087

VL - 23

SP - 18864

EP - 18871

JO - Optics Express

JF - Optics Express

IS - 15

ER -

Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector

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All Science Journal Classification (ASJC) codes

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