Green's function based 2-D MOSFET modeling for random dopant fluctuation

Yong Hyeon Shin, Jung Han Kang, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 2012 Dec 32012 Dec 5

Publication series

Name2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Other

Other2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
CountryThailand
CityBangkok
Period12/12/312/12/5

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Shin, Y. H., Kang, J. H., & Yun, I. (2012). Green's function based 2-D MOSFET modeling for random dopant fluctuation. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 [6482794] (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012). https://doi.org/10.1109/EDSSC.2012.6482794