Green's function based 2-D MOSFET modeling for random dopant fluctuation

Yong Hyeon Shin, Jung Han Kang, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 2012 Dec 32012 Dec 5

Publication series

Name2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Other

Other2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
CountryThailand
CityBangkok
Period12/12/312/12/5

Fingerprint

Green's function
Charge distribution
Poisson equation
Doping (additives)
Laplace equation
Differential equations
Electric potential

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Shin, Y. H., Kang, J. H., & Yun, I. (2012). Green's function based 2-D MOSFET modeling for random dopant fluctuation. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 [6482794] (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012). https://doi.org/10.1109/EDSSC.2012.6482794
Shin, Yong Hyeon ; Kang, Jung Han ; Yun, Ilgu. / Green's function based 2-D MOSFET modeling for random dopant fluctuation. 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012).
@inproceedings{336269c757bf44408defba9d5056d38e,
title = "Green's function based 2-D MOSFET modeling for random dopant fluctuation",
abstract = "Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.",
author = "Shin, {Yong Hyeon} and Kang, {Jung Han} and Ilgu Yun",
year = "2012",
month = "12",
day = "1",
doi = "10.1109/EDSSC.2012.6482794",
language = "English",
isbn = "9781467356961",
series = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",
booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

}

Shin, YH, Kang, JH & Yun, I 2012, Green's function based 2-D MOSFET modeling for random dopant fluctuation. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482794, 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 12/12/3. https://doi.org/10.1109/EDSSC.2012.6482794

Green's function based 2-D MOSFET modeling for random dopant fluctuation. / Shin, Yong Hyeon; Kang, Jung Han; Yun, Ilgu.

2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482794 (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Green's function based 2-D MOSFET modeling for random dopant fluctuation

AU - Shin, Yong Hyeon

AU - Kang, Jung Han

AU - Yun, Ilgu

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

AB - Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

UR - http://www.scopus.com/inward/record.url?scp=84875727050&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875727050&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2012.6482794

DO - 10.1109/EDSSC.2012.6482794

M3 - Conference contribution

AN - SCOPUS:84875727050

SN - 9781467356961

T3 - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

BT - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

ER -

Shin YH, Kang JH, Yun I. Green's function based 2-D MOSFET modeling for random dopant fluctuation. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482794. (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012). https://doi.org/10.1109/EDSSC.2012.6482794