Green's function based 2-D MOSFET modeling for random dopant fluctuation

Yong Hyeon Shin; Jung Han Kang; Ilgu Yun

doi:10.1109/EDSSC.2012.6482794

Green's function based 2-D MOSFET modeling for random dopant fluctuation

Yong Hyeon Shin, Jung Han Kang, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

Original language	English
Title of host publication	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs	https://doi.org/10.1109/EDSSC.2012.6482794
Publication status	Published - 2012
Event	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand Duration: 2012 Dec 3 → 2012 Dec 5

Publication series

Name	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Other

Other	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
Country/Territory	Thailand
City	Bangkok
Period	12/12/3 → 12/12/5

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EDSSC.2012.6482794

Cite this

@inproceedings{336269c757bf44408defba9d5056d38e,

title = "Green's function based 2-D MOSFET modeling for random dopant fluctuation",

abstract = "Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.",

author = "Shin, {Yong Hyeon} and Kang, {Jung Han} and Ilgu Yun",

year = "2012",

doi = "10.1109/EDSSC.2012.6482794",

language = "English",

isbn = "9781467356961",

series = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

note = "2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",

}

Shin, YH, Kang, JH & Yun, I 2012, Green's function based 2-D MOSFET modeling for random dopant fluctuation. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482794, 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 12/12/3. https://doi.org/10.1109/EDSSC.2012.6482794

Green's function based 2-D MOSFET modeling for random dopant fluctuation. / Shin, Yong Hyeon; Kang, Jung Han; Yun, Ilgu.

2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482794 (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Green's function based 2-D MOSFET modeling for random dopant fluctuation

AU - Shin, Yong Hyeon

AU - Kang, Jung Han

AU - Yun, Ilgu

PY - 2012

Y1 - 2012

N2 - Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

AB - Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson's equation into a Green's function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green's function based 2-D MOSFET model is proposed. The model starts from the Poisson's equation to obtain the initial conditions and then sum of Green's function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

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T3 - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

BT - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

T2 - 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012

Y2 - 3 December 2012 through 5 December 2012

ER -

Green's function based 2-D MOSFET modeling for random dopant fluctuation

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