Both wurtzite and zinc-blende phase junctioned GaN nanostructures were synthesized using thermal chemical vapor deposition methods via the vapor-liquid-solid process for the first time. We observed catalyst movement and the regrowth of nanowire zinc-blende phases. This phenomenon was believed to occur in order to reduce the lattice mismatches between the wurtzite phase GaN and Au planes. The growth route could synthesize the c- and h-GaN junctioned nanostructures. The emission values for the zinc-blende phase GaN nanosturtures in cathodoluminescence were shifted a few meV higher than the reported values because the zinc-blende phase GaN epitaxially grew on wurtzite phase GaN without the residual strain.
|Number of pages||4|
|Journal||Crystal Growth and Design|
|Publication status||Published - 2010 Jun 2|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics