Growth and characteristics of zinc-blende and wurtzite GaN junctioned branch nanostructures

Sammook Kang, Bong Kyun Kang, Sang Woo Kim, Dae Ho Yoon

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Both wurtzite and zinc-blende phase junctioned GaN nanostructures were synthesized using thermal chemical vapor deposition methods via the vapor-liquid-solid process for the first time. We observed catalyst movement and the regrowth of nanowire zinc-blende phases. This phenomenon was believed to occur in order to reduce the lattice mismatches between the wurtzite phase GaN and Au planes. The growth route could synthesize the c- and h-GaN junctioned nanostructures. The emission values for the zinc-blende phase GaN nanosturtures in cathodoluminescence were shifted a few meV higher than the reported values because the zinc-blende phase GaN epitaxially grew on wurtzite phase GaN without the residual strain.

Original languageEnglish
Pages (from-to)2581-2584
Number of pages4
JournalCrystal Growth and Design
Issue number6
Publication statusPublished - 2010 Jun 2

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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