Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

K. H. Shim, Jae Min Myoung, O. V. Gluschenkov, C. Kim, K. Kim, M. C. Yoo, S. Kim, D. A. Turnbull, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

Original languageEnglish
Pages (from-to)347-352
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume423
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Fingerprint

Molecular beam epitaxy
Semiconductor quantum wells
Heterojunctions
molecular beam epitaxy
quantum wells
Plasmas
Helium
Cathodoluminescence
cathodoluminescence
liquid helium
rooms
Structural properties
Photoluminescence
x ray diffraction
Optical properties
Diffraction
photoluminescence
optical properties
X rays
Liquids

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shim, K. H., Myoung, J. M., Gluschenkov, O. V., Kim, C., Kim, K., Yoo, M. C., ... Bishop, S. G. (1996). Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE. Materials Research Society Symposium - Proceedings, 423, 347-352.
Shim, K. H. ; Myoung, Jae Min ; Gluschenkov, O. V. ; Kim, C. ; Kim, K. ; Yoo, M. C. ; Kim, S. ; Turnbull, D. A. ; Bishop, S. G. / Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 423. pp. 347-352.
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abstract = "AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.",
author = "Shim, {K. H.} and Myoung, {Jae Min} and Gluschenkov, {O. V.} and C. Kim and K. Kim and Yoo, {M. C.} and S. Kim and Turnbull, {D. A.} and Bishop, {S. G.}",
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Shim, KH, Myoung, JM, Gluschenkov, OV, Kim, C, Kim, K, Yoo, MC, Kim, S, Turnbull, DA & Bishop, SG 1996, 'Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE', Materials Research Society Symposium - Proceedings, vol. 423, pp. 347-352.

Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE. / Shim, K. H.; Myoung, Jae Min; Gluschenkov, O. V.; Kim, C.; Kim, K.; Yoo, M. C.; Kim, S.; Turnbull, D. A.; Bishop, S. G.

In: Materials Research Society Symposium - Proceedings, Vol. 423, 01.12.1996, p. 347-352.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

AU - Shim, K. H.

AU - Myoung, Jae Min

AU - Gluschenkov, O. V.

AU - Kim, C.

AU - Kim, K.

AU - Yoo, M. C.

AU - Kim, S.

AU - Turnbull, D. A.

AU - Bishop, S. G.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

AB - AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

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