Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

K. H. Shim; J. M. Myoung; O. V. Gluschenkov; C. Kim; K. Kim; M. C. Yoo; S. Kim; D. A. Turnbull; S. G. Bishop

doi:10.1557/proc-423-347

Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

K. H. Shim, J. M. Myoung, O. V. Gluschenkov, C. Kim, K. Kim, M. C. Yoo, S. Kim, D. A. Turnbull, S. G. Bishop

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

Original language	English
Pages (from-to)	347-352
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	423
DOIs	https://doi.org/10.1557/proc-423-347
Publication status	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-423-347

Cite this

@article{798e3659685448fb925f7ad7761a4ec7,

title = "Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE",

abstract = "AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.",

author = "Shim, {K. H.} and Myoung, {J. M.} and Gluschenkov, {O. V.} and C. Kim and K. Kim and Yoo, {M. C.} and S. Kim and Turnbull, {D. A.} and Bishop, {S. G.}",

year = "1996",

doi = "10.1557/proc-423-347",

language = "English",

volume = "423",

pages = "347--352",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

AU - Shim, K. H.

AU - Myoung, J. M.

AU - Gluschenkov, O. V.

AU - Kim, C.

AU - Kim, K.

AU - Yoo, M. C.

AU - Kim, S.

AU - Turnbull, D. A.

AU - Bishop, S. G.

PY - 1996

Y1 - 1996

N2 - AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

AB - AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

UR - http://www.scopus.com/inward/record.url?scp=0030386548&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030386548&partnerID=8YFLogxK

U2 - 10.1557/proc-423-347

DO - 10.1557/proc-423-347

M3 - Conference article

AN - SCOPUS:0030386548

SN - 0272-9172

VL - 423

SP - 347

EP - 352

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this