Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

K. H. Shim, J. M. Myoung, O. V. Gluschenkov, C. Kim, K. Kim, M. C. Yoo, S. Kim, D. A. Turnbull, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

AlGaN/GaN heterostructures with multiple quantum wells were grown by plasma-assisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoluminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

Original languageEnglish
Pages (from-to)347-352
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume423
DOIs
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Shim, K. H., Myoung, J. M., Gluschenkov, O. V., Kim, C., Kim, K., Yoo, M. C., Kim, S., Turnbull, D. A., & Bishop, S. G. (1996). Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE. Materials Research Society Symposium - Proceedings, 423, 347-352. https://doi.org/10.1557/proc-423-347