The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg 3N2 powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire.
Bibliographical noteFunding Information:
This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ). The author (S.N. Das) thanks University Grant Commission, Government of India, for granting financial support to start up a new Lab at his college. J.P. Kar and T. I. Lee were supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST)(2012-K1A3A1A19-038371).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering