Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes

Kyuhyun Bang, Sukkoo Jung, Kwang Hyeon Baik, Jae Min Myoung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the V/III ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2θ-ω scans, we found that there existed convex graded In compositions ranging from 4 to 12.7% in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20–100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was ∼11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55%.

Original languageEnglish
Pages (from-to)842-846
Number of pages5
JournalCurrent Applied Physics
Volume17
Issue number6
DOIs
Publication statusPublished - 2017 Jun 1

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Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Electroluminescence
Growth temperature
Polarization
Chemical analysis
Composition effects
electroluminescence
Valence bands
polarization
Desorption
Anisotropy
Electric fields
shift
pulling
Wavelength
desorption
injection

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

@article{671fa2229fd9472894ebf8131220b1d2,
title = "Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes",
abstract = "We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the V/III ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2θ-ω scans, we found that there existed convex graded In compositions ranging from 4 to 12.7{\%} in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20–100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was ∼11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55{\%}.",
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Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes. / Bang, Kyuhyun; Jung, Sukkoo; Baik, Kwang Hyeon; Myoung, Jae Min.

In: Current Applied Physics, Vol. 17, No. 6, 01.06.2017, p. 842-846.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes

AU - Bang, Kyuhyun

AU - Jung, Sukkoo

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AU - Myoung, Jae Min

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N2 - We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the V/III ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2θ-ω scans, we found that there existed convex graded In compositions ranging from 4 to 12.7% in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20–100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was ∼11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55%.

AB - We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the V/III ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2θ-ω scans, we found that there existed convex graded In compositions ranging from 4 to 12.7% in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20–100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was ∼11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55%.

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