Abstract
We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the V/III ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2θ-ω scans, we found that there existed convex graded In compositions ranging from 4 to 12.7% in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20–100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was ∼11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55%.
| Original language | English |
|---|---|
| Pages (from-to) | 842-846 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 17 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2017 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes. / Bang, Kyuhyun; Jung, Sukkoo; Baik, Kwang Hyeon; Myoung, Jae Min.
In: Current Applied Physics, Vol. 17, No. 6, 01.06.2017, p. 842-846.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes
AU - Bang, Kyuhyun
AU - Jung, Sukkoo
AU - Baik, Kwang Hyeon
AU - Myoung, Jae Min
PY - 2017/6/1
Y1 - 2017/6/1
N2 - We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the V/III ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2θ-ω scans, we found that there existed convex graded In compositions ranging from 4 to 12.7% in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20–100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was ∼11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55%.
AB - We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the V/III ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2θ-ω scans, we found that there existed convex graded In compositions ranging from 4 to 12.7% in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20–100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was ∼11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55%.
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U2 - 10.1016/j.cap.2017.03.016
DO - 10.1016/j.cap.2017.03.016
M3 - Article
AN - SCOPUS:85015856373
VL - 17
SP - 842
EP - 846
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 6
ER -