Growth and characterization of ZnO thin films grown by pulsed laser deposition

Sang Hyuck Bae; Sang Yeol Lee; Beom Jun Jin; Seongil Im

doi:10.1016/S0169-4332(00)00752-2

Growth and characterization of ZnO thin films grown by pulsed laser deposition

Sang Hyuck Bae, Sang Yeol Lee, Beom Jun Jin, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

ZnO thin films on (0 0 1) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of 200-700 °C. According to XRD, (0 0 2) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly dependent upon the stoichiometry of ZnO films, rather than the crystalline quality.

Original language	English
Pages (from-to)	525-528
Number of pages	4
Journal	Applied Surface Science
Volume	169-170
DOIs	https://doi.org/10.1016/S0169-4332(00)00752-2
Publication status	Published - 2001 Jan 15

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 1998.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(00)00752-2

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title = "Growth and characterization of ZnO thin films grown by pulsed laser deposition",

abstract = "ZnO thin films on (0 0 1) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of 200-700 °C. According to XRD, (0 0 2) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly dependent upon the stoichiometry of ZnO films, rather than the crystalline quality.",

author = "Bae, {Sang Hyuck} and Lee, {Sang Yeol} and Jin, {Beom Jun} and Seongil Im",

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doi = "10.1016/S0169-4332(00)00752-2",

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T1 - Growth and characterization of ZnO thin films grown by pulsed laser deposition

AU - Bae, Sang Hyuck

AU - Lee, Sang Yeol

AU - Jin, Beom Jun

AU - Im, Seongil

N1 - Funding Information: The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 1998.

PY - 2001/1/15

Y1 - 2001/1/15

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AB - ZnO thin films on (0 0 1) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of 200-700 °C. According to XRD, (0 0 2) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly dependent upon the stoichiometry of ZnO films, rather than the crystalline quality.

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Growth and characterization of ZnO thin films grown by pulsed laser deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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