Growth and characterization of ZnO thin films grown by pulsed laser deposition

Sang Hyuck Bae, Sang Yeol Lee, Beom Jun Jin, Seongil Im

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

ZnO thin films on (0 0 1) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of 200-700 °C. According to XRD, (0 0 2) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly dependent upon the stoichiometry of ZnO films, rather than the crystalline quality.

Original languageEnglish
Pages (from-to)525-528
Number of pages4
JournalApplied Surface Science
Volume169-170
DOIs
Publication statusPublished - 2001 Jan 15

Fingerprint

Pulsed laser deposition
Crystalline materials
Thin films
Aluminum Oxide
Substrates
Sapphire
Stoichiometry
Oxygen
Wavelength
Lasers
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Bae, Sang Hyuck ; Lee, Sang Yeol ; Jin, Beom Jun ; Im, Seongil. / Growth and characterization of ZnO thin films grown by pulsed laser deposition. In: Applied Surface Science. 2001 ; Vol. 169-170. pp. 525-528.
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Growth and characterization of ZnO thin films grown by pulsed laser deposition. / Bae, Sang Hyuck; Lee, Sang Yeol; Jin, Beom Jun; Im, Seongil.

In: Applied Surface Science, Vol. 169-170, 15.01.2001, p. 525-528.

Research output: Contribution to journalArticle

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