Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH 3

Byongju Kim, Hyunchul Jang, Sun Wook Kim, Dae Seop Byeon, Sangmo Koo, Jason S. Song, Dae Hong Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In situ phosphorus-doped polycrystalline silicon (polysilicon) films grown on silicon oxide layers using trisilane (Si3H8) and phosphine (PH3) as precursors are investigated as a function of the Si3H8/PH3 gas flow ratio and the growth temperature. At a high flow rate for Si3H8 in the temperature range of 600-700 °C, the deposition process is controlled by the rate of desorption of hydrogen molecules on the surface, which has an activation energy of 1.13 eV. For a low Si3H8 flow rate at growth temperatures >650 °C, however, the deposition is limited by the diffusion of Si3H8 gas to the surface. The presence of phosphorus decreases the crystallization temperature of the polysilicon layers during growth. In addition, the ratio of phosphorus incorporated into the polysilicon decreases with increasing growth temperature because of the increase in the growth rate. The resistivity of the phosphorus-doped polysilicon films decreases with increasing deposition temperature at the same phosphorus concentration, indicating that the use of a high growth temperature results in an enhancement in the activation of phosphorus in the polysilicon films during growth.

Original languageEnglish
Article number031510
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume32
Issue number3
DOIs
Publication statusPublished - 2014 May

Fingerprint

silicon films
Polysilicon
Phosphorus
phosphorus
Electric properties
electrical properties
Growth temperature
phosphine
temperature
Flow rate
flow velocity
Silicon oxides
Film growth
Crystallization
Temperature
silicon
Flow of gases
PH.3
silicon oxides
Hydrogen

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{6e2902331ce544538855d0811556f60f,
title = "Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH 3",
abstract = "In situ phosphorus-doped polycrystalline silicon (polysilicon) films grown on silicon oxide layers using trisilane (Si3H8) and phosphine (PH3) as precursors are investigated as a function of the Si3H8/PH3 gas flow ratio and the growth temperature. At a high flow rate for Si3H8 in the temperature range of 600-700 °C, the deposition process is controlled by the rate of desorption of hydrogen molecules on the surface, which has an activation energy of 1.13 eV. For a low Si3H8 flow rate at growth temperatures >650 °C, however, the deposition is limited by the diffusion of Si3H8 gas to the surface. The presence of phosphorus decreases the crystallization temperature of the polysilicon layers during growth. In addition, the ratio of phosphorus incorporated into the polysilicon decreases with increasing growth temperature because of the increase in the growth rate. The resistivity of the phosphorus-doped polysilicon films decreases with increasing deposition temperature at the same phosphorus concentration, indicating that the use of a high growth temperature results in an enhancement in the activation of phosphorus in the polysilicon films during growth.",
author = "Byongju Kim and Hyunchul Jang and Kim, {Sun Wook} and Byeon, {Dae Seop} and Sangmo Koo and Song, {Jason S.} and Ko, {Dae Hong}",
year = "2014",
month = "5",
doi = "10.1116/1.4870817",
language = "English",
volume = "32",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH 3. / Kim, Byongju; Jang, Hyunchul; Kim, Sun Wook; Byeon, Dae Seop; Koo, Sangmo; Song, Jason S.; Ko, Dae Hong.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 32, No. 3, 031510, 05.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH 3

AU - Kim, Byongju

AU - Jang, Hyunchul

AU - Kim, Sun Wook

AU - Byeon, Dae Seop

AU - Koo, Sangmo

AU - Song, Jason S.

AU - Ko, Dae Hong

PY - 2014/5

Y1 - 2014/5

N2 - In situ phosphorus-doped polycrystalline silicon (polysilicon) films grown on silicon oxide layers using trisilane (Si3H8) and phosphine (PH3) as precursors are investigated as a function of the Si3H8/PH3 gas flow ratio and the growth temperature. At a high flow rate for Si3H8 in the temperature range of 600-700 °C, the deposition process is controlled by the rate of desorption of hydrogen molecules on the surface, which has an activation energy of 1.13 eV. For a low Si3H8 flow rate at growth temperatures >650 °C, however, the deposition is limited by the diffusion of Si3H8 gas to the surface. The presence of phosphorus decreases the crystallization temperature of the polysilicon layers during growth. In addition, the ratio of phosphorus incorporated into the polysilicon decreases with increasing growth temperature because of the increase in the growth rate. The resistivity of the phosphorus-doped polysilicon films decreases with increasing deposition temperature at the same phosphorus concentration, indicating that the use of a high growth temperature results in an enhancement in the activation of phosphorus in the polysilicon films during growth.

AB - In situ phosphorus-doped polycrystalline silicon (polysilicon) films grown on silicon oxide layers using trisilane (Si3H8) and phosphine (PH3) as precursors are investigated as a function of the Si3H8/PH3 gas flow ratio and the growth temperature. At a high flow rate for Si3H8 in the temperature range of 600-700 °C, the deposition process is controlled by the rate of desorption of hydrogen molecules on the surface, which has an activation energy of 1.13 eV. For a low Si3H8 flow rate at growth temperatures >650 °C, however, the deposition is limited by the diffusion of Si3H8 gas to the surface. The presence of phosphorus decreases the crystallization temperature of the polysilicon layers during growth. In addition, the ratio of phosphorus incorporated into the polysilicon decreases with increasing growth temperature because of the increase in the growth rate. The resistivity of the phosphorus-doped polysilicon films decreases with increasing deposition temperature at the same phosphorus concentration, indicating that the use of a high growth temperature results in an enhancement in the activation of phosphorus in the polysilicon films during growth.

UR - http://www.scopus.com/inward/record.url?scp=84898636278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898636278&partnerID=8YFLogxK

U2 - 10.1116/1.4870817

DO - 10.1116/1.4870817

M3 - Article

AN - SCOPUS:84898636278

VL - 32

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

M1 - 031510

ER -